In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon so...In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon solar cell under polychromatic illumination in a dynamic state. Starting from the Boltzmann equation of semiconductors, the author establishes the general equation of particle transport. Assumptions made on the latter allow it to give the equation of distribution of minority carriers in a general way in its case to be studied. This dimensioned distribution equation reveals the parameters of influences on the distribution of carriers. It obtains a partial derivative equation for the carrier distribution function. The boundary conditions are then discretized to order one and then to order two. By considering boundary conditions and the nature of the carriers, the author numerically resolves the discretized general equation by assessing the influence of the nature of the boundary conditions and truncation errors and the influence of the discretization step on the density of the charge carriers by setting certain parameters and varying others. The work ends with a conclusion and logical follow-up to this work.展开更多
文摘In this work, the effects of boundaries conditions and truncation errors in the distribution of minority carriers in the semiconductor are studied. It is a one-dimensional digital study of a polycrystalline silicon solar cell under polychromatic illumination in a dynamic state. Starting from the Boltzmann equation of semiconductors, the author establishes the general equation of particle transport. Assumptions made on the latter allow it to give the equation of distribution of minority carriers in a general way in its case to be studied. This dimensioned distribution equation reveals the parameters of influences on the distribution of carriers. It obtains a partial derivative equation for the carrier distribution function. The boundary conditions are then discretized to order one and then to order two. By considering boundary conditions and the nature of the carriers, the author numerically resolves the discretized general equation by assessing the influence of the nature of the boundary conditions and truncation errors and the influence of the discretization step on the density of the charge carriers by setting certain parameters and varying others. The work ends with a conclusion and logical follow-up to this work.
