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Bending Efficiency of Bent Multiple-Slot Waveguides 被引量:1
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作者 Hamid Keivani alireza kargar 《Chinese Physics Letters》 SCIE CAS CSCD 2009年第12期118-121,共4页
The bending efficiency of three-dimensional bent multiple-slot waveguides is studied by applying a combined method of effective-index and modified transfer-matrix methods. The effects of asymmetric structure, asymmetr... The bending efficiency of three-dimensional bent multiple-slot waveguides is studied by applying a combined method of effective-index and modified transfer-matrix methods. The effects of asymmetric structure, asymmetric slots, and asymmetric middle strips on the bending efficiency are investigated. We show that the bending efficiency can be improved by the use of asymmetric structures and asymmetric middle strips. The bending efficiency of different slot waveguides (up to quintuple-slot structure) is compared. It is revealed that although the single-slot waveguide in general provides the lowest bending loss for the same waveguide parameters, it is possible that the multiple-slot waveguide can present a lower bending loss than the single-slot one. 展开更多
关键词 Electronics and devices Optics quantum optics and lasers
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Modeling of a Silicon Nanowire pH Sensor with Nanoscale Side Gate Voltage
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作者 alireza kargar 《Chinese Physics Letters》 SCIE CAS CSCD 2009年第6期73-76,共4页
A silicon nanowire (Si-NW) sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the... A silicon nanowire (Si-NW) sensor for pH detection is presented. The conductance of the device is analytically obtained, demonstrating that the conductance increases with decreasing oxide thickness. To calculate the electrical conductance of the sensor, the diffusion-drift model and nonlinear Poisson-Boltzmann equation are applied. To improve the conductance and sensitivity, a Si-NW sensor with nanoscaie side gate voltage is offered and its characteristics are theoretically achieved. It is revealed that the conductance and sensor sensitivity can be enhanced by adding appropriate side gate voltages. This effect is compared to a similar fabricated structure in the literature, which has a wire with a rectangular cross section. Finally, the effect of NW length on sensor performance is investigated and an inverse relation between sensor sensitivity and NW length is achieved. 展开更多
关键词 gamma-ray bursts GAMMA-RAYS RELATIVITY
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Bending efficiency analysis of horizontal single-and multiple-slot waveguide microrings 被引量:2
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作者 alireza kargar 《Optoelectronics Letters》 EI 2011年第1期5-9,共5页
The bending efficiencies of three-dimensional(3D) horizontal single-and multiple-slot waveguide microrings are analyzed using the effective index and modified transfer matrix methods.The effects of waveguide parameter... The bending efficiencies of three-dimensional(3D) horizontal single-and multiple-slot waveguide microrings are analyzed using the effective index and modified transfer matrix methods.The effects of waveguide parameters,low-index material,high-index material,asymmetric structure,and asymmetric slots on the bending loss are studied.The results show that the bending efficiency can be enhanced by applying asymmetric structures and asymmetric slots.In addition,it is demonstrated that the bending loss increases with the increase of the number of slots.However,by using proper thicknesses for different high-index layers of the horizontal multiple-slot waveguide,it is possible that the horizontal multiple-slot waveguide can provide a lower bending loss than the single-slot one. 展开更多
关键词 弯曲损耗 槽波导 效率分析 卧式 微环 非对称结构 传输矩阵方法 波导参数
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