In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to ...In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.展开更多
In this paper we propose theoretically a set of ellipsometric configurations using a rotating polarizer, compensator, and analyzer at a speed ratio of N1ω：N2ω：N3ω. Different ellipsometric configurations can be ob...In this paper we propose theoretically a set of ellipsometric configurations using a rotating polarizer, compensator, and analyzer at a speed ratio of N1ω：N2ω：N3ω. Different ellipsometric configurations can be obtained by giving different integral values to N1, N2, and N3. All configurations are applied to bulk c-Si and GaAs to calculate the real and imaginary parts of the refractive index of the samples. The accuracies of all ellipsometric configurations are investigated in the presence of a hypothetical noise and with small misalignments of the optical elements. Moreover, the uncertainties in the ellipsometric parameters as functions of the uncertainties of the Fourier coefficients are studied. The comparison among different configurations reveals that the rotating compensator–analyzer configuration corresponds to the minimum error in the calculated optical parameters.展开更多
文摘In a recent previous work, we proposed a rotating polarizer-analyzer ellipsometer (RPAE) in which the two elements are rotating synchronously in the same direction with a speed ratio 1:3. We applied this technique to bulk samples. In this work, we present theoretically the characterization of 100 nm SiO2 thin film using this spectroscopic RPAE. We assume a structure consisting of air (ambient)/SiO2 (thin film)/c-Si (substrate). The ellipsometric parameters ψ and Δ are calculated when a clean signal is received by the detector and when a hypothetical noise is imposed on this signal. The film thickness and the optical constants of the film are calculated for the noisy signal in the spectrum range 200 - 800 nm. The results are compared with the proposed thickness and with the accepted values for SiO2 optical constants.
文摘In this paper we propose theoretically a set of ellipsometric configurations using a rotating polarizer, compensator, and analyzer at a speed ratio of N1ω：N2ω：N3ω. Different ellipsometric configurations can be obtained by giving different integral values to N1, N2, and N3. All configurations are applied to bulk c-Si and GaAs to calculate the real and imaginary parts of the refractive index of the samples. The accuracies of all ellipsometric configurations are investigated in the presence of a hypothetical noise and with small misalignments of the optical elements. Moreover, the uncertainties in the ellipsometric parameters as functions of the uncertainties of the Fourier coefficients are studied. The comparison among different configurations reveals that the rotating compensator–analyzer configuration corresponds to the minimum error in the calculated optical parameters.
