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Tunable D peak in gated graphene 被引量:1
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作者 anna ott Ivan A. Verzhbitskiy +3 位作者 Joseph Clough Axel Eckmann Thanasis Georgiou Cinzia Casiraghi 《Nano Research》 SCIE EI CAS CSCD 2014年第3期338-344,共7页
We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization o... We report the gate-modulated Raman spectrum of defective graphene. We show that the intensity of the D peak can be reversibly tuned by applying a gate voltage. This effect is attributed to chemical functionalization of the graphene crystal lattice, generated by an electrochemical reaction involving the water layer trapped at the interface between silicon and graphene. 展开更多
关键词 GRAPHENE GATING defects DOPING ELECTROCHEMISTRY
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