期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Development of a Printed Coil for Wirelessly Charging a Tracking Elderly Patch
1
作者 Bouchta Hajjine Christophe Escriba +4 位作者 Samuel Charlot anne hemeryck Julien Roux Sabeha Fettouma Zedek Jean-Yves Fourniols 《Wireless Engineering and Technology》 2016年第2期83-95,共13页
Monitoring systems for elderly require a compromise between reduced size and operational autonomy. The latter to get a system as independent as possible and to fit with our application needs for daily use. Our patch i... Monitoring systems for elderly require a compromise between reduced size and operational autonomy. The latter to get a system as independent as possible and to fit with our application needs for daily use. Our patch is developed as a surveillance system for old people;we chose to equip it with a wireless charging system for greater ease of use, imperceptible in the everyday life and waterproofing. This paper presents the development of a printed receiver coil to be integrated in a wireless charger to be used in an elderly tracking patch. The proposed design is validated using simulation that presents a good agreement with measurement results: Simulation (@150 KHz: L = 10.74 μH;R = 3 &Omega;) and Measurement (@150 KHz: L = 10.8 μH;R = 3.16 &Omega;). The receiver coil is elaborated on a polyimide substrate in the cleanroom of our laboratory LAAS-CNRS (Laboratory for Analysis and Architecture of Systems-National Center for Scientific Research) and a PCB (Printed Circuit Board) charger prototype is fabricated to test its performances before the integration of the wireless charging property in the tracking patch. The proposed coil presents a good compromise between small size and efficiency. For a charging current of 7.5 mA, this coil can ensure the recharging of the patch up to a distance of 4.8 mm between the Qi transmitter and receiver which is more than enough for our application. 展开更多
关键词 Wireless Charger Receiving Coil Tracking Patch Cleanroom Process
下载PDF
Insight of surface treatments for CMOS compatibility of InAs nanowi 被引量:1
2
作者 Daya S. Dhungana anne hemeryck +3 位作者 Nicolo Sartori Pier-Francesco Fazzini Filadelfo Cristiano Sebastien R. Plissard 《Nano Research》 SCIE EI CAS CSCD 2019年第3期581-586,共6页
A CMOS compatible process is prese nted in order to grow self-catalyzed InAs nano wires on silic on by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas ... A CMOS compatible process is prese nted in order to grow self-catalyzed InAs nano wires on silic on by molecular beam epitaxy. The crucial step of this process is a new in-situ surface preparation under hydrogen (gas or plasma) during the substrate degassing combined with an in-situ arsenic ann eali ng prior to growth. Morphological and structural characterizati ons of the InAs nano wires are prese nted and growth mecha nisms are discussed in detail. The major in flue nee of surface termi nation is exposed both experime ntally and theoretically using statistics on ensemble of nanowires and density functional theory (DFT) calculations. The differences observed between Molecular Beam Epitaxy (MBE) and Metal Organic Vapor Phase Epitaxy (MOVPE) growth of I nAs nano wires can be explai ned by these differe nt surfaces termi nations. The transition between a vapor solid (VS) and a vapor liquid solid (VLS) growth mechanism is presented. Optimized growth conditions lead to very high aspect ratio nano wires (up to 50 nm in diameter and 3 micron in len gth) without passi ng the 410℃ thermal limit, which makes the whole process CMOS compatible. Overall, our results suggest a new method for surface preparation and a possible tuning of the growth mechanism using different surface termi nations. 展开更多
关键词 Ⅲ-Ⅴ SEMICONDUCTORS on silicon INAS NANOWIRES self-catalyzed GROWTH hydrogen preparation GROWTH MODELING density functional theory (DFT) MODELING
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部