Optimization of broadband omnidirectional antireflection coatings for solar cells

Broadband and omnidirectional antireflection coating is generally an effective way to improve solar cell efficiency, because the destructive interference between the reflected and incident light can maximize the light transmission into the absorption layer. In this paper, we report the incident quantum efficiency ηin, not incident energy or power, as the evaluation function by the ant colony algorithm optimization method, which is a swarm-based optimization method. Also, SPCTRL2 is proposed to be incorporated for accurate optimization because the solar irradiance on a receiver plane is dependent on position, season, and time. Cities of Quito, Beijing and Moscow are selected for two-and three-layer antireflective coating optimization over λ = [300,1100] nm and θ = [0°, 90°]. The ηin increases by 0.26%, 1.37% and 4.24% for the above 3 cities, respectively, compared with that calculated by other rigorous optimization algorithms methods, which is further verified by the effect of position and time dependent solar spectrum on the antireflective coating design.

Model of Combined Transport of Perishable Foodstuffs and Safety Inspection Based on Data Mining

There is still no effective means to analyze in depth and utilize domestic mass data about agricultural product quality safety tests in china now. The neural network algorithm, the classification regression tree algorithm, the Bayesian network algorithm were selected according to the principle of selecting combination model and were used to build models respectively and then combined, innovatively establishing a combination model which has relatively high precision, strong robustness and better explanatory to predict the results of perishable food transportation meta-morphism monitoring. The relative optimal prediction model of the perishable food transportation metamorphism monitoring system could be got. The relative perfect prediction model can guide the actual sampling work about food quality and safety by prognosticating the occurrence of unqualified food to select the typical and effective samples for test, thus improving the efficiency and effectiveness of sampling work effectively, so as to avoid deteriorated perishable food’s approaching the market to ensure the quality and safety of perishable food transportation. A solid protective wall was built in the protection of general perishable food consumers’ health.

Fabrication of flexible AlGaInP LED

Flexible light-emitting diodes(LEDs)are highly desired for wearable devices,flexible displays,robotics,biomedicine,etc.Traditionally,the transfer process of an ultrathin wafer of about 10–30μm to a flexible substrate is utilized.However,the yield is low,and it is not applicable to thick GaN LED chips with a 100μm sapphire substrate.In this paper,transferable LED chips utilized the mature LED manufacture technique are developed,which possesses the advantage of high yield.The flexible LED array demonstrates good electrical and optical performance.

Graphene/SrTiO3 interface-based UV photodetectors with high responsivity

Strontium titanate(SrTiO3),which is a crucial perovskite oxide with a direct energy band gap of 3.2 eV,holds great promise for ultraviolet(UV)photodetection.However,the response performance of the conventional SrTiO3-based photodetectors is limited by the large relative dielectric constant of the material,which reduces the internal electric field for electron-hole pair separation to form a current collected by electrodes.Recently,graphene/semiconductor hybrid photodetectors by van-der-Waals heteroepitaxy method demonstrate ultrahigh sensitivity,which is benefit from the interface junction architecture and then prolonged lifetime of photoexcited carriers.Here,a graphene/SrTiO3 interface-based photodetector is demonstrated with an ultrahigh responsivity of 1.2×106 A/W at the wavelength of 325 nm and∼2.4×104 A/W at 261 nm.The corresponding response time is in the order of∼ms.Compared with graphene/GaN interface junctionbased hybrid photodetectors,∼2 orders of magnitude improvement of the ultrahigh responsivity originates from a gain mechanism which correlates with the large work function difference induced long photo-carrier lifetime as well as the low background carrier density.The performance of high responsivity and fast response speed facilitates SrTiO3 material for further efforts seeking practical applications.

A 2DEG back-gated graphene/AlGaN deep-ultraviolet photodetector with ultrahigh responsivity

A graphene/AlGaN deep-ultraviolet(UV)photodetector is presented with ultrahigh responsivity of 3.4×105 A/W at 261 nm incident wavelength and 149 pW light power.A gain mechanism based on electron trapping at the potential well is proposed to be responsible for the high responsivity.To optimize the trade-off between responsivity and response speed,a back-gate electrode is designed at the AlGaN/GaN two-dimensional electron gas(2DEG)area which eliminates the persistent photocurrent effect and shortens the recovery time from several hours to milliseconds.The 2DEG gate is proposed as an alternative way to apply the back gate electrode on AlGaN based devices on insulating substrates.This work sheds light on a possible way for weak deep-UV light detection.

Total dose test with γ-ray for silicon single photon avalanche diodes

Gamma-ray(γ-ray)radiation for silicon single photon avalanche diodes(Si SPADs)is evaluated,with total dose of 100 krad(Si)and dose rate of 50 rad(Si)/s by using 60Co as theγ-ray radiation source.The breakdown voltage,photocurrent,and gain have no obvious change after the radiation.However,both the leakage current and dark count rate increase by about one order of magnitude above the values before the radiation.Temperature-dependent current-voltage measurement results indicate that the traps caused by radiation function as generation and recombination centers.Both leakage current and dark count rate can be almost recovered after annealing at 200℃for about 2 hours,which verifies the radiation damage mechanics.

Impact of damping on high speed 850 nm VCSEL performance

High speed VCSELs are important optical devices in short-reach optical communication links and interconnects because of their low cost and high modulation speeds. In this paper, the impact of damping on the their static and dynamic characteristics is analyzed and demonstrated. Through the shallow corrosion of the top layer DBR, the VCSELs with different damping is designed and fabricated. With the increase of the surface etch depth from 0 to ～55 nm for 9 μm oxide-aperture VCSEL, the K factor related with the damping is reduced from0.31 to 0.23 ns;. When the etch depth of the VCSEL with 9 μm oxide-aperture is decreased to ～25 nm,output power is increased from 4.03 to 4.70 mW and small signal modulation bandwidth is also increased from15.46 to 16.37 GHz. It shows that there is a tradeoff between damping and differential gain for improving modulation speed.

Wet nitrogen oxidation technology and its anisotropy influence on VCSELs

Vertical cavity surface emitting lasers（VCSELs） are widely used in optical communications and optical interconnects due to their advantages of low threshold, low power consumption and so on. Wet nitrogen oxidation technology, which utilizes H20 molecules to oxidize the Al;Ga;As, is used for electrical and optical mode confinement. In this paper, the effects of oxidation time, oxidation temperature and oxidation anisotropy on the oxidation rate are explored and demonstrated. The ratio of oxidation rate on [0-11] to [011] crystal orientation is defined as oxidation anisotropy coefficient, which decreases with the increase of oxidation temperature and oxidation time. In order to analyze the effect of the oxidation anisotropy on the VCSEL performance, an oxide-aperture of the VCSELs with two difference shapes is designed and then fabricated. The static performance of these fabricated VCSELs has been measured,whose threshold current ratio ～0.714 is a good agreement with that of the theoretical calculation value ～0.785. Our research on wet nitrogen oxidation and its anisotropy serves as an important reference in the batch fabrication of large-area VCSELs.