Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and...Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A^(Ⅲ)B^(Ⅴ), A^(Ⅱ)B^(Ⅵ), and potential alternatives to formerly mentioned—“third wave” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A^(Ⅲ)B^(Ⅴ) APDs, such as AlInAsSb, which may be used in future optical communications, type-Ⅱ superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A^(Ⅲ)B^(Ⅴ) APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10^(5) for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.展开更多
Nature Nanotechnology(2023)https://doi.org/10.1038/s41565-023-01446-8 The real-time image processing proliferation places specific information computing and energy conservation demands on sensor-rich platforms.Fabrica...Nature Nanotechnology(2023)https://doi.org/10.1038/s41565-023-01446-8 The real-time image processing proliferation places specific information computing and energy conservation demands on sensor-rich platforms.Fabrication of reconfigurable image sensors allowing for in-sensory computing usually requires a sophisticated architecture of multiple layers integration.A team of researchers from the State Key Laboratory of Infrared Physics at Shanghai Institute of Technical Physics,Chinese Academy of Sciences in China and from Department of Electrical and Systems Engineering at University of Pennsylvania in United States,has found a very promising approach that integrating sensing,memory,and computing within a simple two-terminal metal/semiconductor/metal architecture.展开更多
Two-color infrared detection technology realizes target recognition in a complex environment by using the multispectral characteristics of the target.In the last decade,several papers have announced the usefulness of ...Two-color infrared detection technology realizes target recognition in a complex environment by using the multispectral characteristics of the target.In the last decade,several papers have announced the usefulness of the 2D materials for high operating temperature photodetectors covering infrared spectral regions.Researchers from Shanghai Institute of Technical Physics of Chinese Academy of Sciences,Huazhong University of Science and Technology,and Fudan University demonstrated an uncooled two-color infrared photodetector based on van der Waals heterojunction.This two-color photodetector can detect near-infrared and mid-wave infrared at the same time,and with ultra-low crosstalk,it realizes spectral blackbody detection with temporal and spatial coherence.Its room temperature operating ability greatly reduces the volume,weight,and power consumption of the detection components,and demonstrates the application prospects of van der Waals heterostructures in the miniaturized and intelligent photodetection systems.展开更多
基金The National Science Centre,Poland—grant nos.UMO-2019/33/B/ST7/00614,UMO-2021/41/B/ST7/01532Science and Technology Commission of Shanghai Municipality—grant no.23WZ2500400.
文摘Avalanche photodiodes (APDs) have drawn huge interest in recent years and have been extensively used in a range of fields including the most important one—optical communication systems due to their time responses and high sensitivities. This article shows the evolution and the recent development of A^(Ⅲ)B^(Ⅴ), A^(Ⅱ)B^(Ⅵ), and potential alternatives to formerly mentioned—“third wave” superlattices (SL) and two-dimensional (2D) materials infrared (IR) APDs. In the beginning, the APDs fundamental operating principle is demonstrated together with progress in architecture. It is shown that the APDs evolution has moved the device’s performance towards higher bandwidths, lower noise, and higher gain-bandwidth products. The material properties to reach both high gain and low excess noise for devices operating in different wavelength ranges were also considered showing the future progress and the research direction. More attention was paid to advances in A^(Ⅲ)B^(Ⅴ) APDs, such as AlInAsSb, which may be used in future optical communications, type-Ⅱ superlattice (T2SLs, “Ga-based” and “Ga-free”), and 2D materials-based IR APDs. The latter—atomically thin 2D materials exhibit huge potential in APDs and could be considered as an alternative material to the well-known, sophisticated, and developed A^(Ⅲ)B^(Ⅴ) APD technologies to include single-photon detection mode. That is related to the fact that conventional bulk materials APDs’ performance is restricted by reasonably high dark currents. One approach to resolve that problem seems to be implementing low-dimensional materials and structures as the APDs’ active regions. The Schottky barrier and atomic level thicknesses lead to the 2D APD dark current significant suppression. What is more, APDs can operate within visible (VIS), near-infrared (NIR)/mid-wavelength infrared range (MWIR), with a responsivity ~80 A/W, external quantum efficiency ~24.8%, gain ~10^(5) for MWIR [wavelength, λ = 4 μm, temperature, T = 10–180 K, Black Phosphorous (BP)/InSe APD]. It is believed that the 2D APD could prove themselves to be an alternative providing a viable method for device fabrication with simultaneous high-performance—sensitivity and low excess noise.
文摘Nature Nanotechnology(2023)https://doi.org/10.1038/s41565-023-01446-8 The real-time image processing proliferation places specific information computing and energy conservation demands on sensor-rich platforms.Fabrication of reconfigurable image sensors allowing for in-sensory computing usually requires a sophisticated architecture of multiple layers integration.A team of researchers from the State Key Laboratory of Infrared Physics at Shanghai Institute of Technical Physics,Chinese Academy of Sciences in China and from Department of Electrical and Systems Engineering at University of Pennsylvania in United States,has found a very promising approach that integrating sensing,memory,and computing within a simple two-terminal metal/semiconductor/metal architecture.
文摘Two-color infrared detection technology realizes target recognition in a complex environment by using the multispectral characteristics of the target.In the last decade,several papers have announced the usefulness of the 2D materials for high operating temperature photodetectors covering infrared spectral regions.Researchers from Shanghai Institute of Technical Physics of Chinese Academy of Sciences,Huazhong University of Science and Technology,and Fudan University demonstrated an uncooled two-color infrared photodetector based on van der Waals heterojunction.This two-color photodetector can detect near-infrared and mid-wave infrared at the same time,and with ultra-low crosstalk,it realizes spectral blackbody detection with temporal and spatial coherence.Its room temperature operating ability greatly reduces the volume,weight,and power consumption of the detection components,and demonstrates the application prospects of van der Waals heterostructures in the miniaturized and intelligent photodetection systems.
