A typical high-e fficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss. In the present work, the physical properties of CdS thin fil...A typical high-e fficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss. In the present work, the physical properties of CdS thin films are investigated where films with 100 nm thickness were fabricated on the different types of substrates viz. soda–lime glass, indium-doped tin oxide(ITO)-and fl uorine-doped tin oxide(FTO)-coated glass substrates, and silicon wafer using electron beam evaporation. The X-ray diffraction patterns confirmed that deposited thin films showed cubic phase and had(111) as predominant orientation where the structural parameters were observed to be varied with nature of substrates. The ohmic behaviour of the CdS films was disclosed by current–voltage characteristics, whereas the scanning electron microscopy micrograph revealed the uniform deposition of the CdS films with the presence of round-shaped grains. The elemental analysis confirmed the CdS films deposition where the Cd/S weight percentage ratio was changed with nature of substrates. The direct energy band gap was observed in the 1.63–2.50 eV range for the films grown on different substrates. The investigated properties of thin CdS layers demonstrated that the selection of substrate(in terms of nature) during device fabrication plays a crucial role.展开更多
This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO...This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75-1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.展开更多
文摘A typical high-e fficiency solar cell device needs the best lattice matching between different constituent layers to mitigate the open-circuit voltage loss. In the present work, the physical properties of CdS thin films are investigated where films with 100 nm thickness were fabricated on the different types of substrates viz. soda–lime glass, indium-doped tin oxide(ITO)-and fl uorine-doped tin oxide(FTO)-coated glass substrates, and silicon wafer using electron beam evaporation. The X-ray diffraction patterns confirmed that deposited thin films showed cubic phase and had(111) as predominant orientation where the structural parameters were observed to be varied with nature of substrates. The ohmic behaviour of the CdS films was disclosed by current–voltage characteristics, whereas the scanning electron microscopy micrograph revealed the uniform deposition of the CdS films with the presence of round-shaped grains. The elemental analysis confirmed the CdS films deposition where the Cd/S weight percentage ratio was changed with nature of substrates. The direct energy band gap was observed in the 1.63–2.50 eV range for the films grown on different substrates. The investigated properties of thin CdS layers demonstrated that the selection of substrate(in terms of nature) during device fabrication plays a crucial role.
基金financial support under UGC-BSR fellowship No.F.25-1/2013-14(BSR)/7-123/2007(BSR)
文摘This paper presents a study on thickness dependent physical properties of cadmium selenide thin films. The films of thickness 445, 631 and 810 nm were deposited employing thermal evaporation technique on glass and ITO-coated glass substrates followed by thermal annealing in air atmosphere at 200 °C. These films were subjected to X-ray diffractometer, UV-Vis spectrophotometer, scanning electron microscopy（SEM） and electrometer for structural, optical,surface morphological and electrical analysis respectively. The structural analysis reveals that the films are nanocrystalline in nature with cubic phase and preferred orientation（111）. The crystallographic parameters such as lattice constant, interplanar spacing, grain size, internal strain, dislocation density, number of crystallites per unit area and texture coefficient are calculated and discussed. The optical band gap is found in the range 1.75-1.92 e V and observed to increase with thickness.The SEM study shows that the annealed films are uniform, fully covered and well defined. The electrical analysis shows that the conductivity is varied with film thickness and found within the order of semiconductor behavior.
