Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large a...Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.展开更多
基金supported by the National Natural Science Foundation of China(21825103,52001165)Natural Science Foundation of Hubei Province(2019CFA002)+2 种基金Natural Science Foundation of Jiangsu Province(BK20200475)the Fundamental Research Funds for the Central Universities(2019kfy XMBZ018,30921011215)supports from Analytical and Testing Center in Huazhong University of Science and Technology as well as Nanostructure Research Center(NRC)supported by the Fundamental Research Funds for the Central Universities(WUT:2019III012GX,2020III002GX)。
文摘Strain engineering is a promising method for tuning the electronic properties of two-dimensional(2 D)materials,which are capable of sustaining enormous strain thanks to their atomic thinness.However,applying a large and homogeneous strain on these 2D materials,including the typical semiconductor MoS_(2),remains cumbersome.Here we report a facile strategy for the fabrication of highly strained MoS_(2) via chalcogenide substitution reaction(CSR)of MoTe_(2) with lattice inheritance.The MoS_(2)resulting from the sulfurized MoTe_(2) sustains ultra large in-plane strain(approaching its strength limit~10%)with great homogeneity.Furthermore,the strain can be deterministically and continuously tuned to~1.5%by simply varying the processing temperature.Thanks to the fine control of our CSR process,we demonstrate a heterostructure of strained MoS_(2)/MoTe_(2)with abrupt interface.Finally,we verify that such a large strain potentially allows the modulation of MoS_(2) bandgap over an ultra-broad range(~1 e V).Our controllable CSR strategy paves the way for the fabrication of highly strained 2D materials for applications in devices.
