We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance,reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the...We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance,reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects.展开更多
Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dyn...Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quantum dot lasers grown directly on exact(001) GaP/Si. Effectively, a single-mode operation was observed at 1.3 μm with modes at spectrally distant locations. High temperature stability with T_0~103 K has been achieved with a low threshold of 3 mA for microrings with an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Small signal modulation responses were measured for the first time for the microrings directly grown on silicon, and a 3 dB bandwidth of 6.5 GHz was achieved for a larger ring with an outer ring radius of 50 μm and a ring waveguide width of 4 μm. The directly modulated microring laser,monolithically integrated on a silicon substrate, can incur minimal real estate cost while offering full photonic functionality.展开更多
基金supported by DARPA MTO E-PHI and the Semiconductor Research Corporationsupport of NSF graduate research fellowships
文摘We review recent advances in the field of quantum dot lasers on silicon. A summary of device performance,reliability, and comparison with similar quantum well lasers grown on silicon will be presented. We consider the possibility of scalable, low size, weight, and power nanolasers grown on silicon enabled by quantum dot active regions for future short-reach silicon photonics interconnects.
基金Advanced Research Projects Agency–Energy(ARPA-E)(DE-AR0000672)
文摘Microring lasers feature ultralow thresholds and inherent wavelength-division multiplexing functionalities, offering an attractive approach to miniaturizing photonics in a compact area. Here, we present static and dynamic properties of microring quantum dot lasers grown directly on exact(001) GaP/Si. Effectively, a single-mode operation was observed at 1.3 μm with modes at spectrally distant locations. High temperature stability with T_0~103 K has been achieved with a low threshold of 3 mA for microrings with an outer ring radius of 15 μm and a ring waveguide width of 4 μm. Small signal modulation responses were measured for the first time for the microrings directly grown on silicon, and a 3 dB bandwidth of 6.5 GHz was achieved for a larger ring with an outer ring radius of 50 μm and a ring waveguide width of 4 μm. The directly modulated microring laser,monolithically integrated on a silicon substrate, can incur minimal real estate cost while offering full photonic functionality.
