期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Effects of Quantum well Size Alteration on Excitonic Population Oscillation Slow Light Devices Properties
1
作者 Hassan Kaatuzian Hossein Shokri Kojori +1 位作者 ashkan zandi Reza Kohandani 《Optics and Photonics Journal》 2013年第2期298-304,共7页
This paper investigates the effects of quantum well size changes on center frequency and slow down factor of an slow light device. In this way, we consider the quantum well size alteration effects on oscillator streng... This paper investigates the effects of quantum well size changes on center frequency and slow down factor of an slow light device. In this way, we consider the quantum well size alteration effects on oscillator strength and binding energy of exciton. First, we investigate the variations in oscillator strength of exciton due to different quantum well size. Second, exciton binding energy level shift due to size of quantum well is investigated. According to this analysis, we have developed a new method for tuning slow light device bandwidth center frequency and slow down factor. Analysis and simulation of a basic GaAs/AlGaAs quantum wells optical slow light device based on excitonic population oscillation shows that size of quantum wells could tune both of the frequency properties and slow down factor of an optical slow light device. In our simulation with 34 quantum wells each with the width of 60?, we have received the slow down factor of more than 60,000. These achievements are useful in optical nonlinearity enhancements, all-optical signal processing applications and optical communications. 展开更多
关键词 SLOW Light Coherent POPULATION OSCILLATION Quantum Well EXCITON Oscillator Strength EXCITON Binding Energy
下载PDF
Structural parameters improvement of an integrated HBT in a cascode configuration opto-electronic mixer 被引量:1
2
作者 Hassan Kaatuzian Hadi Dehghan Nayeri +1 位作者 Masoud Ataei ashkan zandi 《Journal of Semiconductors》 EI CAS CSCD 2013年第9期35-40,共6页
We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors (HBT), in a cascode configuration. A new HBT with modified physical structure ... We analyze an integrated electrically pumped opto-electronic mixer, which consists of two InP/GalnAs hetero junction bipolar transistors (HBT), in a cascode configuration. A new HBT with modified physical structure is proposed and simulated to improve the frequency characteristics of a cascode mixer. For the verification and calibrating software simulator, we compare the simulation results of a typical HBT, before modifying it and com paring it with empirical reported experiments. Then we examine the simulator on our modified proposed HBT to prove its wider frequency characteristics with better flatness and acceptable down conversion gain. Although the idea is examined in several GHz modulation, it may easily be extended to state of the art HBT cascode mixers in much higher frequency range. 展开更多
关键词 CASCODE down conversion gain MIXER opto-electronic photo HBT simulation
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部