Structural and dielectric properties of polycrystalline samples of lead-free （l-x）（Nal/2Bil/2）TiO3-xZnO, prepared using a high-temperature solid-state reaction method, were investigated in the composition range o...Structural and dielectric properties of polycrystalline samples of lead-free （l-x）（Nal/2Bil/2）TiO3-xZnO, prepared using a high-temperature solid-state reaction method, were investigated in the composition range of 0≤x≤0.10. Rietveld analyses of X-ray diffraction data indicated the formation of a single-phase hexagonal structure with R3c symmetry. Williamson-Hall approach was applied to estimate the apparent particle size and lattice strain of the compounds. Temperature dependence of dielectric constant showed that the addition of ZnO to （Na1/2Bi1/2）TiO3 shifted the phase transition temperature towards higher side, a property favourable for practical applications of these ceramics. Further, temperature dependent permittivity data provided low temperature coefficient of capacitance （TCC〈8%） up to 100℃. Furthermore, a decrease in the value of dielectric loss with an increase in ZnO content was observed.展开更多
基金The financial support,by the Department of Science and Technology,New Delhi (Grant No. SR/S2/CMP-17/2008)
文摘Structural and dielectric properties of polycrystalline samples of lead-free （l-x）（Nal/2Bil/2）TiO3-xZnO, prepared using a high-temperature solid-state reaction method, were investigated in the composition range of 0≤x≤0.10. Rietveld analyses of X-ray diffraction data indicated the formation of a single-phase hexagonal structure with R3c symmetry. Williamson-Hall approach was applied to estimate the apparent particle size and lattice strain of the compounds. Temperature dependence of dielectric constant showed that the addition of ZnO to （Na1/2Bi1/2）TiO3 shifted the phase transition temperature towards higher side, a property favourable for practical applications of these ceramics. Further, temperature dependent permittivity data provided low temperature coefficient of capacitance （TCC〈8%） up to 100℃. Furthermore, a decrease in the value of dielectric loss with an increase in ZnO content was observed.
