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High Nitrogen Pressure Solution (HNPS) growth of GaN on 2 inch free standing GaN substrates 被引量:2
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作者 M.BOKOWSKI I.GRZEGORY +4 位作者 b.lucznik T.SOCHACKI M.KRYKO G.KAMLER S.POROWSKI 《Science China(Technological Sciences)》 SCIE EI CAS 2011年第1期42-46,共5页
Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The in... Recent results of High Nitrogen Pressure Solution (HNPS) growth of GaN crystals deposited on and separated from 2 inch,and smaller,GaN substrates grown by Hydride Vapor Phase Epitaxy (HVPE) have been presented. The influence of the c-plane bowing in the initial substrate on quality,rate and mode of growth by HNPS method has been analyzed in details. 展开更多
关键词 High Nitrogen Pressure Solution (HNPS) growth seeded growth Hydride Vapor Phase Epitaxy (HVPE) growth
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