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Spurious Solutions in the Multiband Effective Mass Theory Applied to Low Dimensional Nanostructures
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作者 b.lassen R.V.N.Melnik M.Willatzen 《Communications in Computational Physics》 SCIE 2009年第9期699-729,共31页
In this paper we analyze a long standing problem of the appearance of spurious,non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures.The theory results in a s... In this paper we analyze a long standing problem of the appearance of spurious,non-physical solutions arising in the application of the effective mass theory to low dimensional nanostructures.The theory results in a system of coupled eigenvalue PDEs that is usually supplemented by interface boundary conditions that can be derived from a variational formulation of the problem.We analyze such a system for the envelope functions and show that a failure to restrict their Fourier expansion coeffi-cients to small k components would lead to the appearance of non-physical solutions.We survey the existing methodologies to eliminate this difficulty and propose a simple and effective solution.This solution is demonstrated on an example of a two-band model for both bulk materials and low-dimensional nanostructures.Finally,based on the above requirement of small k,we derive a model for nanostructures with cylindrical symmetry and apply the developed model to the analysis of quantum dots using an eight-band model. 展开更多
关键词 Effective envelope theory quantum confinement abrupt interfaces multiband models k space Fourier coefficients highly oscillatory integrals variational formulation coupled systems of PDEs multiple scales continuum and atomistic models eigenvalue problem interface boundary conditions band gap spurious solutions low dimensional semiconductor nanostructures.
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Computational Methods for Electromechanical Fields in Self-Assembled Quantum Dots
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作者 D.Barettin S.Madsen +1 位作者 b.lassen M.Willatzen 《Communications in Computational Physics》 SCIE 2012年第3期797-830,共34页
A detailed comparison of continuum and valence force field strain calculations in quantum-dot structures is presented with particular emphasis to boundary conditions,their implementation in the finite-elementmethod,an... A detailed comparison of continuum and valence force field strain calculations in quantum-dot structures is presented with particular emphasis to boundary conditions,their implementation in the finite-elementmethod,and associated implications for electronic states.The first part of this work provides the equation framework for the elastic continuum model including piezoelectric effects in crystal structures as well as detailing the Keating model equations used in the atomistic valence force field calculations.Given the variety of possible structure shapes,a choice of pyramidal,spherical and cubic-dot shapes is made having in mind their pronounced shape differences and practical relevance.In this part boundary conditions are also considered;in particular the relevance of imposing different types of boundary conditions is highlighted and discussed.In the final part,quantum dots with inhomogeneous indium concentration profiles are studied in order to highlight the importance of taking into account the exact In concentration profile for real quantum dots.The influence of strain,electric-field distributions,and material inhomogeneity of spherical quantum dots on electronic wavefunctions is briefly discussed. 展开更多
关键词 Quantum dots electromechanical fields continuum model valence force field boundary conditions
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