Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method.Nucleation density and site have been observed and analyzed by using scanning electron micrography.Experiment...Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method.Nucleation density and site have been observed and analyzed by using scanning electron micrography.Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores.Reasons of these phenomena are discussed.展开更多
In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and diff...In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.展开更多
文摘Diamond films have been deposited on porous silicon with microwave plasma chemical vapour deposition method.Nucleation density and site have been observed and analyzed by using scanning electron micrography.Experimental results showed that the nucleation density changes with the porosity and the nucleation occurs mostly on the edge of the pores.Reasons of these phenomena are discussed.
基金Supported by the National Natural Science Foundation of China (Grant No. 60307002)
文摘In this paper, ZnO films are deposited on freestanding thick diamond films (FTDF) by plasma-assisted metal organic chemical vapour deposition (MOCVD). Diethyl zinc (DEZn), O2 and N2O are applied as precursors and different substrate temperatures are used to achieve high quality ZnO films. The influence of substrate temperature on the properties of ZnO films is systematically investigated by X-ray diffraction (XRD), Hall measurements and electron probe microanalysis (EPMA). Experimental results demonstrate that ZnO films deposited at 600℃ and 73 Pa display a fine electrical quality and Zn/O atomic ratio plays an important role in the electrical property of ZnO films.