为揭示白洋淀地区晚更新世末期气候环境变化特征与未来演化趋势,通过综合分析白洋淀南部地区ZK02钻孔中的湖泊沉积物粒度组分特征,并且在测年的基础上,对晚更新世末期(26.9 ka B.P.)以来白洋淀的环境气候变化进行综合分析。结果表明:26....为揭示白洋淀地区晚更新世末期气候环境变化特征与未来演化趋势,通过综合分析白洋淀南部地区ZK02钻孔中的湖泊沉积物粒度组分特征,并且在测年的基础上,对晚更新世末期(26.9 ka B.P.)以来白洋淀的环境气候变化进行综合分析。结果表明:26.9~10.5 ka B.P.期间,该地区以洪冲积沉积为主,气候处于冰期向间冰期过渡阶段,但总体仍比较干燥;10.5~8.3 ka B.P期间,沉积环境以河流相沉积为主,气候比前一阶段温暖湿润;在8.3 ka B.P.至今期间,该地区沉积环境逐渐以湖相沉积为主,气候以温暖湿润的间冰期气候为主,并于全新世中期(约6.6 ka B.P.)达到晚更新世末期以来气候最温暖湿润的时期,随后于3.2 ka B.P.和1.8 ka B.P.前后发生了两次明显的冷干波动,在地质构造与河流变迁的影响下,白洋淀开始萎缩解体,加之受到人类活动的干扰,最终形成了白洋淀湖泊的现代形态格局。综上所述,受季风演化的影响,华北地区末次冰期环境冷干,早全新世开始转湿,中全新世最湿,晚全新世环境转干。这一湖泊演化模式与东亚夏季风的演化模式相似,对于理解人类活动影响下的未来季风演化模式具有重要的参考价值。展开更多
We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al_(2)O_(3) lamination dielectric deposited by atomic layer deposition (ALD) as...We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al_(2)O_(3) lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.展开更多
通过对白洋淀ZK-1钻孔粒度特征、岩性特征和磁化率特征进行详细分析,并结合碳十四测年数据,分析白洋淀ZK-1钻孔粒度特征及其沉积环境。上更新统(10 690~27 920 a BP)岩性主要为亚砂土,含少量粉砂和亚粘土。沉积物以粉砂为主,粒径范围5.7...通过对白洋淀ZK-1钻孔粒度特征、岩性特征和磁化率特征进行详细分析,并结合碳十四测年数据,分析白洋淀ZK-1钻孔粒度特征及其沉积环境。上更新统(10 690~27 920 a BP)岩性主要为亚砂土,含少量粉砂和亚粘土。沉积物以粉砂为主,粒径范围5.74Φ~6.24Φ,频率曲线以单峰为主,概率累积曲线以细二段式为主。晚更新世处于第四冰期,气候以干偏凉为主,沉积环境为沼泽相。全新统(5 710~10 690 a BP)岩性主要是亚砂土和粉砂,沉积物以粉砂为主,粒径平均值5.34Φ,频率曲线以单峰为主,概率累积曲线以细二段式为主,全新世处于冰后期,气候由干偏凉转向温凉略湿,沉积环境为浅湖相。晚更新世气候以干偏凉为主,水位较低;到全新世,气候以温凉略湿为主,气候变凉,水位升高。展开更多
Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielec...Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.展开更多
文摘为揭示白洋淀地区晚更新世末期气候环境变化特征与未来演化趋势,通过综合分析白洋淀南部地区ZK02钻孔中的湖泊沉积物粒度组分特征,并且在测年的基础上,对晚更新世末期(26.9 ka B.P.)以来白洋淀的环境气候变化进行综合分析。结果表明:26.9~10.5 ka B.P.期间,该地区以洪冲积沉积为主,气候处于冰期向间冰期过渡阶段,但总体仍比较干燥;10.5~8.3 ka B.P期间,沉积环境以河流相沉积为主,气候比前一阶段温暖湿润;在8.3 ka B.P.至今期间,该地区沉积环境逐渐以湖相沉积为主,气候以温暖湿润的间冰期气候为主,并于全新世中期(约6.6 ka B.P.)达到晚更新世末期以来气候最温暖湿润的时期,随后于3.2 ka B.P.和1.8 ka B.P.前后发生了两次明显的冷干波动,在地质构造与河流变迁的影响下,白洋淀开始萎缩解体,加之受到人类活动的干扰,最终形成了白洋淀湖泊的现代形态格局。综上所述,受季风演化的影响,华北地区末次冰期环境冷干,早全新世开始转湿,中全新世最湿,晚全新世环境转干。这一湖泊演化模式与东亚夏季风的演化模式相似,对于理解人类活动影响下的未来季风演化模式具有重要的参考价值。
基金Supported by the State Key Program and Major Program of the National Natural Science Foundation of China under Grant Nos 60736033 and 60890191the Doctoral Scientific Research Fund of Beijing University of Technology(No X0002013201101)。
文摘We investigate the characteristics of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with a NbAlO/Al_(2)O_(3) lamination dielectric deposited by atomic layer deposition (ALD) as the gate insulator.A large gate voltage swing (GVS) of 3.96 V and a high breakdown voltage of-150 V for the MIS-HEMT were obtained.We present the gate leakage current mechanisms and analyze the reason for the reduction of the leakage current.Compared with traditional HEMTs,the maximum drain current is improved to 960mA/mm,indicating that NbAlO layers could reduce the surface-related depletion of the channel layer and increase the sheet carrier concentration.In addition,the maximum oscillation frequency of 38.8 GHz shows that the NbAlO high-k dielectric can be considered as a potential gate oxide comparable with other dielectric insulators.
文摘通过对白洋淀ZK-1钻孔粒度特征、岩性特征和磁化率特征进行详细分析,并结合碳十四测年数据,分析白洋淀ZK-1钻孔粒度特征及其沉积环境。上更新统(10 690~27 920 a BP)岩性主要为亚砂土,含少量粉砂和亚粘土。沉积物以粉砂为主,粒径范围5.74Φ~6.24Φ,频率曲线以单峰为主,概率累积曲线以细二段式为主。晚更新世处于第四冰期,气候以干偏凉为主,沉积环境为沼泽相。全新统(5 710~10 690 a BP)岩性主要是亚砂土和粉砂,沉积物以粉砂为主,粒径平均值5.34Φ,频率曲线以单峰为主,概率累积曲线以细二段式为主,全新世处于冰后期,气候由干偏凉转向温凉略湿,沉积环境为浅湖相。晚更新世气候以干偏凉为主,水位较低;到全新世,气候以温凉略湿为主,气候变凉,水位升高。
文摘Accumulation-type GaN metal-oxide-semiconductor field-effect transistors （MOSFETs） with atomic-layer- deposited A1203 gate dielectrics are fabricated. The device, with atomic-layer-deposited A1203 as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al203 as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the A1203 film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm^2/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition A1203 growth and device fabrication.
