We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of ...We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.展开更多
We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GH...We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GHz opearation, and their operations are verified by measurement. The Si OSSB modulator successfully generates a single sideband with larger than 15 dB suppression of the undesired sideband.展开更多
We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature ...We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.展开更多
基金Ministry of Trade,Industry and Energy(MOTIE)(10065666)Yonsei University(Research Scholarship Grants)IC Design Education Center(IDEC)
文摘We present an accurate, easy-to-use large-signal SPICE circuit model for depletion-type silicon ring modulators(Si RMs). Our model includes both the electrical and optical characteristics of the Si RM and consists of circuit elements whose values change depending on modulation voltages. The accuracy of our model is confirmed by comparing the SPICE simulation results of 25 Gb/s non-return-to-zero(NRZ) modulation with the measurement. The model is used for performance optimization of monolithically integrated Si photonic NRZ and pulse-amplitudemodulation 4 transmitters in the standard SPICE circuit design environment.
基金Korean Ministry of Science,ICT and Future Planning(MSIP)(2015R1A2A2A01007772)Korean Ministry of Trade,Industry and Energy(MOTIE)(10065666)
文摘We demonstrate an integrated Si optical single-sideband(OSSB) modulator composed of a parallel dual-ring modulator(PDRM) and a quadrature hybrid coupler(QHC). Both the PDRM and the QHC are carefully designed for 30 GHz opearation, and their operations are verified by measurement. The Si OSSB modulator successfully generates a single sideband with larger than 15 dB suppression of the undesired sideband.
基金supported by the National Research Foundation of Korea grant funded by the Korean Ministry of Science,ICT and Future Planning(No.2015R1A2A2A01007772)the Materials andParts Technology R&D Program funded by the Korean Ministry of Trade,Industry&Energy(Project No.10065666)
文摘We experimentally observe that Si micro-ring modulator（MRM） modulation characteristics are strongly influenced by the modulation data rate and the data pattern and determine this influence is due to the temperature increase caused by dynamic power dissipation within the Si MRM device. We also quantitatively determine the amount of Si MRM resonance wavelength shift due to different modulation data rates, data patterns, and modulation voltages. Our results should be of great help for achieving reliable and optimal modulation characteristics for Si MRMs.
