The photoluminescence (PL) in temperature interval 77 - 300 K is investigated in Eu Ga2Se4:Nd polycrystals. It is established that broad band PL with maximum at 561nm is caused by intracentral transitions 4f65d - 4f7(...The photoluminescence (PL) in temperature interval 77 - 300 K is investigated in Eu Ga2Se4:Nd polycrystals. It is established that broad band PL with maximum at 561nm is caused by intracentral transitions 4f65d - 4f7(8S7/2) of Eu2+ ions. The intracentral emission of Nd3+, corresponding to both transitions from 4F3/2 level and higher situated levels, is observed at interband excitation. The essential intensity of transitions from 2H11/2 and 4F9/2 levels is the interested peculiarity of luminescence spectra of Nd3+ in these crystals.展开更多
文摘The photoluminescence (PL) in temperature interval 77 - 300 K is investigated in Eu Ga2Se4:Nd polycrystals. It is established that broad band PL with maximum at 561nm is caused by intracentral transitions 4f65d - 4f7(8S7/2) of Eu2+ ions. The intracentral emission of Nd3+, corresponding to both transitions from 4F3/2 level and higher situated levels, is observed at interband excitation. The essential intensity of transitions from 2H11/2 and 4F9/2 levels is the interested peculiarity of luminescence spectra of Nd3+ in these crystals.
