This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by t...This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm^2 including pads.展开更多
A 4^(th)-order low-pass filter(LPF) based on active-G_m-RC structure for multi-standard system application is presented in this paper.The performances of LPF are controlled by a 1-bit controlvoltage,and the cut-off fr...A 4^(th)-order low-pass filter(LPF) based on active-G_m-RC structure for multi-standard system application is presented in this paper.The performances of LPF are controlled by a 1-bit controlvoltage,and the cut-off frequency,channel selectivity,and linearity of the proposed filter can be reconfigured accordingly.In order to improve the accuracy of the cut-off frequency,a binary-weighted switched-capacitor array is employed as the auto-tuning circuits to calibrate the RC-time constant.Fabricated in TSMC 0.18μm RF CMOS process,the proposed LPF achieves a measured cutoff frequency of 1.95 and 12.3MHz for WCDMA and GPS/Galileo application with a bandwidth deviation less than 4%.The measured 1dB compression points are-3.0dBm and-5.1dBm respectively for different modes.The core circuit of LPF consumes 1mW and 1.6mW for WCDMA and GPS/Galileo respectively.And the proposed LPF occupies an area of 0.78mm^2.展开更多
This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- indu...This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within 4-0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure （NF） and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.展开更多
基金Supported by the National Nature Science Foundation of China(No.61674037)the Priority Academic Program Development of Jiangsu Higher Education Institutions,the National Power Grid Corp Science and Technology Project(No.SGTYHT/16-JS-198)the State Grid Nanjing Power Supply Company Project(No.1701052)
文摘This paper presents a reconfigurable RF front-end for multi-mode multi-standard(MMMS) applications. The designed RF front-end is fabricated in 0.18 μm RF CMOS technology. The low noise characteristic is achieved by the noise canceling technique while the bandwidth is enhanced by gate inductive peaking technique. Measurement results show that, while the input frequency ranges from 100 MHz to 2.9 GHz, the proposed reconfigurable RF front-end achieves a controllable voltage conversion gain(VCG) from 18 dB to 39 dB. The measured maximum input third intercept point(IIP3) is-4.9 dBm and the minimum noise figure(NF) is 4.6 dB. The consumed current ranges from 16 mA to 26.5 mA from a 1.8 V supply voltage. The chip occupies an area of 1.17 mm^2 including pads.
基金Supported by the National Basic Research Program of China(No.2010CB327404)the Priority Academic Program Development of Jiangsu Higher Education Institutions
文摘A 4^(th)-order low-pass filter(LPF) based on active-G_m-RC structure for multi-standard system application is presented in this paper.The performances of LPF are controlled by a 1-bit controlvoltage,and the cut-off frequency,channel selectivity,and linearity of the proposed filter can be reconfigured accordingly.In order to improve the accuracy of the cut-off frequency,a binary-weighted switched-capacitor array is employed as the auto-tuning circuits to calibrate the RC-time constant.Fabricated in TSMC 0.18μm RF CMOS process,the proposed LPF achieves a measured cutoff frequency of 1.95 and 12.3MHz for WCDMA and GPS/Galileo application with a bandwidth deviation less than 4%.The measured 1dB compression points are-3.0dBm and-5.1dBm respectively for different modes.The core circuit of LPF consumes 1mW and 1.6mW for WCDMA and GPS/Galileo respectively.And the proposed LPF occupies an area of 0.78mm^2.
基金Project Supported by the National Science and Technology Major Project of China(No.2009ZX03002-004)
文摘This paper presents a wideband low noise amplifier （LNA） for multi-standard radio applications. The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gate- inductive-peaking technique. High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band. Fabricated in 0.18 μm CMOS process, the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain. The gain variation is within 4-0.8 dB from 300 MHz to 2.2 GHz. The measured noise figure （NF） and average IIP3 are 3.4 dB and -2 dBm, respectively. The proposed LNA occupies 0.39 mm2 core chip area. Operating at 1.8 V, the LNA drains a current of 11.7 mA.
