<div style="text-align:justify;"> An intracavity frequency doubling acousto-optically Q-switched Neodymium-doped Yttrium Orthvanadate (Nd:YVO<sub>4</sub>) 457 nm blue laser by employing a t...<div style="text-align:justify;"> An intracavity frequency doubling acousto-optically Q-switched Neodymium-doped Yttrium Orthvanadate (Nd:YVO<sub>4</sub>) 457 nm blue laser by employing a three-mirror folded cavity was demonstrated. With the incident pump power of 40.4 W, the maximum average output power of 439 mW 457 nm laser, and the minimum pulse duration of 86.14 ns and the maximum peak power of 510 W were achieved at 10 kHz. The M<sup>2</sup> factors are 1.23 and 1.61 in X and Y directions, respectively. The power stability in two hours is better than 2%. </div>展开更多
N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the...N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,respectively.The influence of N-polarity on on-state resistivity and Ⅰ–Ⅴ characteristic was discussed,demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices.展开更多
文摘<div style="text-align:justify;"> An intracavity frequency doubling acousto-optically Q-switched Neodymium-doped Yttrium Orthvanadate (Nd:YVO<sub>4</sub>) 457 nm blue laser by employing a three-mirror folded cavity was demonstrated. With the incident pump power of 40.4 W, the maximum average output power of 439 mW 457 nm laser, and the minimum pulse duration of 86.14 ns and the maximum peak power of 510 W were achieved at 10 kHz. The M<sup>2</sup> factors are 1.23 and 1.61 in X and Y directions, respectively. The power stability in two hours is better than 2%. </div>
基金Project partially supported by the National Key Research and Development Program of China(No.2016YFB0400802)the National Natural Science Foundation of China(No.61704176)the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications(No.ZJUAMIS1704)
文摘N-polar and Ⅲ-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported.Surface morphology,wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains,respectively.The influence of N-polarity on on-state resistivity and Ⅰ–Ⅴ characteristic was discussed,demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices.
