The paper considers three common snubber circuits used on gate turn-off thyristor and/or insulated gate bipolar transistor inverters. The three snubbers are passive lossless circuits for power bridge legs, and the imp...The paper considers three common snubber circuits used on gate turn-off thyristor and/or insulated gate bipolar transistor inverters. The three snubbers are passive lossless circuits for power bridge legs, and the improvements and modifications to these snubber circuits are presented. The comparative features and operation of the three improved energy recovery snubbers are discussed and supported by PSPICE simulations and experimental results.展开更多
The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are perform...The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the complete composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device. In particular, the GTO gate dynamical characteristics in practical circuits are discussed and experimental results are included.展开更多
基金Supported by the Zhejiang Province Nature Science Foundation of Chinathe Royal Society of U.K.
文摘The paper considers three common snubber circuits used on gate turn-off thyristor and/or insulated gate bipolar transistor inverters. The three snubbers are passive lossless circuits for power bridge legs, and the improvements and modifications to these snubber circuits are presented. The comparative features and operation of the three improved energy recovery snubbers are discussed and supported by PSPICE simulations and experimental results.
基金Supported by the Return Overseas Scholar Foundation of the State Education Commission
文摘The paper presents a complete composite gate turn-off thyristor (GTO) model, which is based on the combination of the p-n-p and n-p-n transistor models. PSpice simulations and parametric sensitive analysis are performed with the complete composite model and calculated results are given, which show that it corresponds statically and dynamically with the practical device. In particular, the GTO gate dynamical characteristics in practical circuits are discussed and experimental results are included.
