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Topological to trivial insulating phase transition in stanene 被引量:2
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作者 Michel Houssa bas van den broek +5 位作者 Konstantina Iordanidou Anh Khoa Augustin Lu Geoffrey Pourtois Jean-Pierre Locquet Valery Afanas'ev Andre Stesmans 《Nano Research》 SCIE EI CAS CSCD 2016年第3期774-778,共5页
stanene 的电子性质, graphene 的 Sn 对应物理论上用第一原则的模拟被学习。对一个 out-of-plane 电场或由量监禁效果导致的小绝缘阶段转变拓扑被预言。结果加亮潜力在门电压使用 stanene nanoribbons 控制了无驱散的基于纺纱的设备... stanene 的电子性质, graphene 的 Sn 对应物理论上用第一原则的模拟被学习。对一个 out-of-plane 电场或由量监禁效果导致的小绝缘阶段转变拓扑被预言。结果加亮潜力在门电压使用 stanene nanoribbons 控制了无驱散的基于纺纱的设备并且被用来将最小的 nanoribbon 宽度放为如此的设备,它典型地是约 5 nm。 展开更多
关键词 相变 绝缘 拓扑 量子限域效应 电子特性 模拟理论 第一原理 结构预测
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Silicene nanoribbons on transition metal dichalcogenide substrates: Effects on electronic structure and ballistic transport 被引量:1
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作者 bas van den broek Michel Houssa +3 位作者 Augustin Lu Geoffrey Pourtois Valery Afanas'ev Andre Stesmans 《Nano Research》 SCIE EI CAS CSCD 2016年第11期3394-3406,共13页
The idea of stacking multiple monolayers of different two-dimensional materials has become a global pursuit. In this work a silicene armchair nanoribbon of width W and van der Waals-bonded to different transition-meta... The idea of stacking multiple monolayers of different two-dimensional materials has become a global pursuit. In this work a silicene armchair nanoribbon of width W and van der Waals-bonded to different transition-metal dichalcogenide (TMD) bilayer substrates MoX2 and WX2, where X = S, Se, Te is considered. The orbital resolved electronic structure and ballistic transport properties of these systems are simulated by employing van der Waals-corrected density functional theory and nonequilibrium Green's functions. We find that the lattice mismatch with the underlying substrate determines the electronic structure, correlated with the silicene buckling distortion and ultimately with the contact resistance of the two-terminal system. The smallest lattice mismatch, obtained with the MoTe2 substrate, results in the silicene ribbon properties coming close to those of a freestanding one. With the TMD bilayer acting as a dielectric layer, the electronic structure is tunable from a direct to an indirect semiconducting layer, and subsequently to a metallic electronic dispersion layer, with a moderate applied perpendicular electric field. 展开更多
关键词 silicene transition metal dichalcogenides van der Waals heterostructure electronic structure ballistic transport
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