Background Cilostazol, an anti-platelet drug for treating coronary heart disease, has been reported to modulate immune cell functions Plasmacytoid dendritic cells (pDCs) have been found to participate in the progres...Background Cilostazol, an anti-platelet drug for treating coronary heart disease, has been reported to modulate immune cell functions Plasmacytoid dendritic cells (pDCs) have been found to participate in the progression of atherosclerosis mainly through interferon ct (IFN-ct) production. Whether cilostazol influences pDCs activation is still not clear. In this study, we aimed to investigate the effects of cilostazol on cell activation and antigen presentation ofpDCs in vitro in this study. Methods Peripheral blood mononuclear cells isolated by Ficoll cen- trifugation and pDCs sorted by flow cytometry were used in this study. After pretreated with cilostazol for 2 h, cells were stimulated with CpG-A, R848 or virus for 6 h or 20 h, or stimulated with CpG-B for 48 h and then co-cultured with naive T cell for five days. Cytokines in supernatant and intracellular cytokines were analyzed by ELISA or flow cytometry respectively. Results Our data indicated that cilostazol could inhibit IFN-α and tumor necrosis factor α (TNF-α) production from pDCs in a dose-dependent manner. In addition, the ability of priming na ve T cells of pDCs was also impaired by cilostazol. The inhibitory effect was not due to cell killing since the viability of pDCs did not change upon cilostazol treatment. Conclusion Cilostazol inhibits pDCs cell activation and antigen presentation in vitro, which may explain how cilostazol protects against atherosclerosis.展开更多
Objectives To assess the regional diastolic function in patients with hypertrophic cardiomyopathy (HCM) by using single-beat, real-time, three-dimensional echocardiography (RT-3DE). Methods Sixty-five patients wit...Objectives To assess the regional diastolic function in patients with hypertrophic cardiomyopathy (HCM) by using single-beat, real-time, three-dimensional echocardiography (RT-3DE). Methods Sixty-five patients with HCM in sinus rhythm together with fifty age- and gender-matched normal controls were studied by two dimensional echocardiography (2DE) and RT-3DE. The parameters analyzed by RT-3DE included: left ventrieular (LV) volumes, left ventricular ejection fraction (LVEF), end diastolic sphericity index (EDSI), diastolic dyssynchrony index (DDI), dispersion end diastole (DISPED), and normalized 17 segmental volume-time curves. Results Evaluated by RT-3DE, LVEF was slightly lower compared with 2DE (63.2 ± 6.8% vs. 59.1 ± 6.4%, P 〈 0.0001). Normal subjects had relatively uniform volumetric curves for all LV segments. In HCM patients, the segmental volumetric curves were dyssynchronous. Increased DDI and DISPED in end diastole were observed in patients with HCM (9.95 ± 3.75, 41.76 ± 17.19, P 〈 0.0001), and not all abnormal volumetric segments occurred in the hypertrophic regions. Conclusions Patients with HCM have presented regional diastolic dyssynchrony in the diastole phase, and this preclinical lesion can be recognized by single-beat RT-3DE.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for appli...Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.展开更多
Human Notum(hNotum)inhibitors could be used for treating Wnt signalling-associated diseases including colorectal cancer.Herein,two series of chalcone derivatives were designed and synthesized aiming to find selective ...Human Notum(hNotum)inhibitors could be used for treating Wnt signalling-associated diseases including colorectal cancer.Herein,two series of chalcone derivatives were designed and synthesized aiming to find selective and potent hNotum inhibitors.Structure–activity relationship(SAR)studies showed that 2-methoxyl and 5-bromine substitutions on A-ring significantly enhanced anti-hNotum effect,while 4’-ethoxyl and 3’-alkyl substitutions on B-ring were beneficial for hNotum inhibition.Among all tested chalcones,B11 displayed the most potent anti-Notum effect(IC_(50)=3.6 nmol/L),good selectivity,excellent chemical stability and suitable metabolic stability.Further investigations showed that B11 acted as a competitive inhibitor of hNotum,while this agent(5μmol/L)significantly weaken the migration abilities of colorectal cancer cells.Collectively,this study deciphers the SARs of chalcones as hNotum inhibitors and reports a novel and potent hNotum inhibitor with the anti-migration effect on colorectal cancer cells,which offers a promising lead compound to develop novel anti-cancer agents.展开更多
As a vital negative regulator of Wnt signaling pathway,human Notum(hNotum)plays a crucial regulatory role in the progression of many human diseases.Deciphering the relevance of h Notum to human diseases requires pract...As a vital negative regulator of Wnt signaling pathway,human Notum(hNotum)plays a crucial regulatory role in the progression of many human diseases.Deciphering the relevance of h Notum to human diseases requires practical and reliable tools for visualizing h Notum activity in living systems.Herein,an enzyme-activatable fluorogenic tool(IR-783 octanoate)was rationally engineered for sensing and imaging h Notum activity in living systems by integrating computer-aided molecular design and biochemical assays.IR-783 octanoate showed good optical properties,excellent specificity and high binding-affinity towards h Notum(K_(m)=0.98μmol/L).IR-783 octanoate could be well up-taken into the cancerous cells or tumors that over-expressed organic anion transporting polypeptides(OATPs),and then hydrolyzed by cellular h Notum to release free IR-783 ketone,which created brightly fluorescent signals around 646 nm.Further investigations showed that IR-783 octanoate achieved a good performance for in-situ functional imaging of h Notum in both living cells,cancerous tissues and organs.It was also found that some SW620cells with multipolar spindles could be stained by IR-783 octanoate to emit extremely bright signals,suggesting that this agent could be used as a novel visualizing tool for tracing the cells undergoing abnormal cell mitoses.Collectively,this study devises a highly specific fluorogenic tool for in-situ functional imaging of hNotum in living systems,which offers a practical and reliable tool to dynamically track the changes in h Notum activity under various conditions.展开更多
Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and opto...Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.展开更多
A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts,which is of considerable challenge due to the difficultie...A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts,which is of considerable challenge due to the difficulties in selectively doping and inevitable physical damages of these atomically thin materials during typical metal integration process.Here,we report the in situ growth of ultrathin metallic NiSe single crystals on WSe2 in which the metallic NiSe nanosheets function as the contact electrodes to WSe2,creating an interface that is essentially free from chemical disorder.The NiSe/WSe2 heterostructures also exhibit well-aligned lattice orientation between the two layers,forming a periodic Moire pattern.Electrical transport studies demonstrate that the NiSe nanosheets exhibit an excellent metallic feature,as evidenced by the extra-high electrical conductivity of up to 1.6×10^6 S-nf1.The WSe2 transistors with the NiSe contact show field-effect mobilities (/vFe) more than double that with Cr/Au electrodes.This study demonstrates an effective pathway to achieve reliable electrical contacts to the atomically thin 2D materials,and maybe readily extended for fabricating 2D/2D low-resistance contacts for a variety of transition metal dichalcogenides.展开更多
Mulitipe stoichiometric ratio of two-dimensional(2D)transition metal dichalcogenides(TMDCs)attracted considerable interest for their unique chemical and physical properties.Here we developed a chemical vapor depositio...Mulitipe stoichiometric ratio of two-dimensional(2D)transition metal dichalcogenides(TMDCs)attracted considerable interest for their unique chemical and physical properties.Here we developed a chemical vapor deposition(CVD)method to controllably synthesize ultrathin NiS and NiS2 nanoplates.By tuning the growth temperature and the amounts of the sulfur powder,2D nonlayered NiS and NiS2 nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm,respectively.X-ray diffraction(XRD)and transmission electron microscopy(TEM)characterization reveal that the 2D NiS and N1S2 nanoplates are high-quality single crystals in the hexagonal and cubic phase,respectively.Electrical transport studies show that electrical conductivities of the 2D NiS and N1S2 nanoplates are as high as 4.6 x 10^5 and 6.3 x 10^5 S·m^-1,respectively.The electrical results demonstrate that the synthesized metallic NiS and NiS2 could serve as good electrodes in 2D electronics.展开更多
The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function.To date,the mixed-dimensional one-dimensional (1D)/2D heterostru...The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function.To date,the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches.However,direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated.Herein,we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers.X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/NS2 heterostructures.Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures.Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior,and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior.Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V,photoresponsivity of 1.51 A/W (Vds =5 V) and fast response time of less than 8 ms.The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape.Together,the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.展开更多
Palladium diselenide(PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synt...Palladium diselenide(PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synthesize PdSe2 via chemical vapor deposition(CVD)method.Through systematic regulation of temperature in the growth process,we can tune the thickness,size,nucleation density and morphology of PdSe2 nanosheets.Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm^2·V^−1·s^−1.The electrical property of the devices after 6 months keeping in the air show little change,implying outstanding air-stability of PdSe2.In addition,PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W^−1 under 914 nm laser.These performances are better than those of most CVD-grown 2D materials,making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.展开更多
Comprehensive Summary Four heterometallic rare earth(Ⅲ)-cobalt(Ⅱ)complexes(rare earth=Y(1),Sm(2),Nd(3),La(4))stabilized by an o-phenylenediamine-bridged tris(phenolato)ligand(L)have been synthesized and characterize...Comprehensive Summary Four heterometallic rare earth(Ⅲ)-cobalt(Ⅱ)complexes(rare earth=Y(1),Sm(2),Nd(3),La(4))stabilized by an o-phenylenediamine-bridged tris(phenolato)ligand(L)have been synthesized and characterized.In these tetranuclear complexes,one polydentate L coordinates to one rare earth(Ⅲ)ion,and one cobalt(Ⅱ)ion,respectively,while two rare earth ions are bridged by four acetate groups.These complexes were applied in the copolymerization of cyclohexene oxide and CO_(2),which showed good activity(TON up to 440)and high poly(cyclohexene carbonate)selectivity(>99%).Kinetic studies determined the equation as rate=k[CHO]1[CO_(2)]0[initiator]1,which proves a first-order dependence on initiator concentrations and implies a synergistic mechanism with rare earth and cobalt ions cooperating in epoxide ring-opening and chain propagation.展开更多
The two-dimensional transition metal dichalcogenides(TMDs)have attracted intense interest as an atomically thin semiconductor channel for the continued transistor scaling.However,with a dangling bond free surface,it h...The two-dimensional transition metal dichalcogenides(TMDs)have attracted intense interest as an atomically thin semiconductor channel for the continued transistor scaling.However,with a dangling bond free surface,it has been a key challenge to reliably integrate high-quality gate dielectrics on TMDs.In particular,the atomic layer deposition of dielectrics on TMDs typically features highly non-uniform nucleation and produces a highly rough or porous dielectric film with rich pinholes that are prone to further damage during the gate integration process.Herein we report a van der Waals(vdW)integration route towards highly reliable gate metal integration on porous dielectrics.The physical lamination process employed by the vdW integration avoids the direct deposition of metal electrodes into porous dielectrics to ensure reliable gate integration and produce low gate leakage devices.The electrical measurements demonstrate the vdW integrated MoS_(2) top gate devices exhibit substantially reduced gate leakage current that is about 3-5 orders of magnitude smaller than that with deposited metal electrodes.Furthermore,we show the vdW integration process can be used to create high performance top-gated MoS_(2) transistors with ultrathin Al_(2)O_(3) dielectrics down to 1 nm,representing the ultimate dielectric scaling for TMDs transistors.This study demonstrates that vdW integration can enable highly reliable gate integration on relatively low quality dielectrics on TMDs,and opens an interesting pathway to high-performance top-gate transistors using dangling bond free two-dimensional(2D)semiconductors.展开更多
Given the different energy rates of multiple types of power generation units,different operation plans affect the economy of microgrids.Limited by load and power generation forecasting technologies,the economic superi...Given the different energy rates of multiple types of power generation units,different operation plans affect the economy of microgrids.Limited by load and power generation forecasting technologies,the economic superiority of day-ahead plans is unable to be fully utilized because of the fluctuation of loads and power sources.In this regard,a two-stage correction strategy-based real-time dispatch method for the economic operation of microgrids is proposed.Based on the optimal day-ahead economic operation plan,unbalanced power is validly allocated in two stages in terms of power increment and current power,which maintains the economy of the day-ahead plan.Further,for operating point offset during real-time correction,a rolling dispatch method is introduced to dynamically update the system operation plan.Finally,the results verify the effectiveness of the proposed method.展开更多
文摘Background Cilostazol, an anti-platelet drug for treating coronary heart disease, has been reported to modulate immune cell functions Plasmacytoid dendritic cells (pDCs) have been found to participate in the progression of atherosclerosis mainly through interferon ct (IFN-ct) production. Whether cilostazol influences pDCs activation is still not clear. In this study, we aimed to investigate the effects of cilostazol on cell activation and antigen presentation ofpDCs in vitro in this study. Methods Peripheral blood mononuclear cells isolated by Ficoll cen- trifugation and pDCs sorted by flow cytometry were used in this study. After pretreated with cilostazol for 2 h, cells were stimulated with CpG-A, R848 or virus for 6 h or 20 h, or stimulated with CpG-B for 48 h and then co-cultured with naive T cell for five days. Cytokines in supernatant and intracellular cytokines were analyzed by ELISA or flow cytometry respectively. Results Our data indicated that cilostazol could inhibit IFN-α and tumor necrosis factor α (TNF-α) production from pDCs in a dose-dependent manner. In addition, the ability of priming na ve T cells of pDCs was also impaired by cilostazol. The inhibitory effect was not due to cell killing since the viability of pDCs did not change upon cilostazol treatment. Conclusion Cilostazol inhibits pDCs cell activation and antigen presentation in vitro, which may explain how cilostazol protects against atherosclerosis.
文摘Objectives To assess the regional diastolic function in patients with hypertrophic cardiomyopathy (HCM) by using single-beat, real-time, three-dimensional echocardiography (RT-3DE). Methods Sixty-five patients with HCM in sinus rhythm together with fifty age- and gender-matched normal controls were studied by two dimensional echocardiography (2DE) and RT-3DE. The parameters analyzed by RT-3DE included: left ventrieular (LV) volumes, left ventricular ejection fraction (LVEF), end diastolic sphericity index (EDSI), diastolic dyssynchrony index (DDI), dispersion end diastole (DISPED), and normalized 17 segmental volume-time curves. Results Evaluated by RT-3DE, LVEF was slightly lower compared with 2DE (63.2 ± 6.8% vs. 59.1 ± 6.4%, P 〈 0.0001). Normal subjects had relatively uniform volumetric curves for all LV segments. In HCM patients, the segmental volumetric curves were dyssynchronous. Increased DDI and DISPED in end diastole were observed in patients with HCM (9.95 ± 3.75, 41.76 ± 17.19, P 〈 0.0001), and not all abnormal volumetric segments occurred in the hypertrophic regions. Conclusions Patients with HCM have presented regional diastolic dyssynchrony in the diastole phase, and this preclinical lesion can be recognized by single-beat RT-3DE.
基金We acknowledge the support from the National Key R&D Program of the Ministry of Science and Technology of China(No.2022YFA1203801)the National Natural Science Foundation of China(grant numbers 51991340,51991343,52221001,62205055)+1 种基金the Hunan Key R&D Program Project(No.2022GK2005)Natural Science Foundation of Jiangsu Province(BK20220860).
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs)have garnered widespread interest in the scientific community and industry for their exceptional physical and chemistry properties,and great potential for applications in diverse fields including(opto)electronics,electrocatalysis,and energy storage.Chemical vapor deposition(CVD)is one of the most compelling growth methods for the scalable growth of high-quality 2D TMDs.However,the conventional CVD process for synthesis of 2D TMDs still encounters significant challenges,primarily attributed to the high melting point of precursor powders,and achieving a uniform distribution of precursor atmosphere on the substrate to obtain controllable smaple domains is difficult.The spin-coating precursor mediated chemical vapor deposition(SCVD)strategy provides refinement over traditional methods by eliminating the use of solid precursors and ensuring a more clean and uniform distribution of the growth material on the substrate.Additionally,the SCVD process allows fine-tuning of material thickness and purity by manipulating solution composition,concentration,and the spin coating process.This Review presents a comprehensive summary of recent advances in controllable growth of 2D TMDs with a SCVD strategy.First,a series of various liquid precursors,additives,source supply methods,and substrate engineering strategies for preparing atomically thin TMDs by SCVD are introduced.Then,2D TMDs heterostructures and novel doped TMDs fabricated through the SCVD method are discussed.Finally,the current challenges and perspectives to synthesize 2D TMDs using SCVD are discussed.
基金financially supported by the National Natural Science Foundation of China(Nos.82104281,81922070,81973286,81801818 and 82273897)Shanghai Municipal Health Commission’s TCM research project(No.2022CX005)+1 种基金Innovation Team and Talents Cultivation Program of National Administration of Traditional Chinese Medicine(No.ZYYCXTD-D-202004)Three-year Action Plan for Shanghai TCM Development and Inheritance Program[No.ZY(2021–2023)-0401]。
文摘Human Notum(hNotum)inhibitors could be used for treating Wnt signalling-associated diseases including colorectal cancer.Herein,two series of chalcone derivatives were designed and synthesized aiming to find selective and potent hNotum inhibitors.Structure–activity relationship(SAR)studies showed that 2-methoxyl and 5-bromine substitutions on A-ring significantly enhanced anti-hNotum effect,while 4’-ethoxyl and 3’-alkyl substitutions on B-ring were beneficial for hNotum inhibition.Among all tested chalcones,B11 displayed the most potent anti-Notum effect(IC_(50)=3.6 nmol/L),good selectivity,excellent chemical stability and suitable metabolic stability.Further investigations showed that B11 acted as a competitive inhibitor of hNotum,while this agent(5μmol/L)significantly weaken the migration abilities of colorectal cancer cells.Collectively,this study deciphers the SARs of chalcones as hNotum inhibitors and reports a novel and potent hNotum inhibitor with the anti-migration effect on colorectal cancer cells,which offers a promising lead compound to develop novel anti-cancer agents.
基金supported by National Natural Science Foundation of China(Nos.81922070,81973286,82273897,U23A20516,81801818)Shanghai Municipal Health Commission’s TCM research project(No.2022CX005)+4 种基金Innovation Team and Talents Cultivation Program of National Administration of Traditional Chinese Medicine(No.ZYYCXTDD-202004)Three-year Action Plan for Shanghai TCM Development and Inheritance Program(No.ZY(2021-2023)-0401)Department of Science&Technology of Liaoning Province Grant(No.2022JH2/20200056)supported by the State Key Laboratory of Fine ChemicalsDalian University of Technology(No.KF 2202)。
文摘As a vital negative regulator of Wnt signaling pathway,human Notum(hNotum)plays a crucial regulatory role in the progression of many human diseases.Deciphering the relevance of h Notum to human diseases requires practical and reliable tools for visualizing h Notum activity in living systems.Herein,an enzyme-activatable fluorogenic tool(IR-783 octanoate)was rationally engineered for sensing and imaging h Notum activity in living systems by integrating computer-aided molecular design and biochemical assays.IR-783 octanoate showed good optical properties,excellent specificity and high binding-affinity towards h Notum(K_(m)=0.98μmol/L).IR-783 octanoate could be well up-taken into the cancerous cells or tumors that over-expressed organic anion transporting polypeptides(OATPs),and then hydrolyzed by cellular h Notum to release free IR-783 ketone,which created brightly fluorescent signals around 646 nm.Further investigations showed that IR-783 octanoate achieved a good performance for in-situ functional imaging of h Notum in both living cells,cancerous tissues and organs.It was also found that some SW620cells with multipolar spindles could be stained by IR-783 octanoate to emit extremely bright signals,suggesting that this agent could be used as a novel visualizing tool for tracing the cells undergoing abnormal cell mitoses.Collectively,this study devises a highly specific fluorogenic tool for in-situ functional imaging of hNotum in living systems,which offers a practical and reliable tool to dynamically track the changes in h Notum activity under various conditions.
基金the National Natural Science Foundation of China (Nos. 61804050 and 51872086)the Double First-Class Initiative of Hunan University (No. 531109100004)the Fundamental Research Funds of the Central Universities (Nos. 531107051078 and 531107051055).
文摘Two-dimensional (2D) van der Waals (vdWs) metal-semiconductor heterostructures with atomically sharp interface and matched work functions have recently attracted great attention due to their unique electronic and optoelectronic properties. Here we report the vapor phase epitaxial growth of large-scale vertical Sb/WSe2 metal-semiconductor vdWs heterostructures with uniform stacking orientation. Compared with the growth on S1O2/S1 substrate, the thick ness of Sb nan osheet on WSe2 can be reduced effectively to mono layer. We con struct Sb-WSe2-Au asymmetric electrodes photodiode based on the Sb/WSe2 heterostructures. Electrical transport measurements indicate that the photodiode show obvious rectifying effect. Optoelectronic characterizations show prominent photoresponse with a high photoresposivity of 364 mA/W, a fast response time of less than 8 ms, a large open-circuit voltage of 0.27 V and a maximum electrical power output of 0.11 nW. The direct growth of high-quality metal-semiconductor vdWs heterostructures may open up new realms in 2D functional electronics and optoelectronics.
基金the financial support from the Fundamental Research Funds of the Central Universities (No.531107051078)the Double First-Class University In让iative of Hunan University (No.531109100004)+2 种基金the 111 Project of China (No.D17003)the support from the National Natural Science Foundation of China (No.751214296,51802090,61874041,and 61804050)Hunan Key Laboratory of Two-Dimensional Materials (No.801200005).
文摘A prerequisite for widespread applications of atomically thin transition metal dichalcogenides in future electronics is to achieve reliable electrical contacts,which is of considerable challenge due to the difficulties in selectively doping and inevitable physical damages of these atomically thin materials during typical metal integration process.Here,we report the in situ growth of ultrathin metallic NiSe single crystals on WSe2 in which the metallic NiSe nanosheets function as the contact electrodes to WSe2,creating an interface that is essentially free from chemical disorder.The NiSe/WSe2 heterostructures also exhibit well-aligned lattice orientation between the two layers,forming a periodic Moire pattern.Electrical transport studies demonstrate that the NiSe nanosheets exhibit an excellent metallic feature,as evidenced by the extra-high electrical conductivity of up to 1.6×10^6 S-nf1.The WSe2 transistors with the NiSe contact show field-effect mobilities (/vFe) more than double that with Cr/Au electrodes.This study demonstrates an effective pathway to achieve reliable electrical contacts to the atomically thin 2D materials,and maybe readily extended for fabricating 2D/2D low-resistance contacts for a variety of transition metal dichalcogenides.
基金We acknowledge the support from the National Natural Science Foundation of China(No.51872086)the Hunan Key Laboratory of Two-Dimensional Materials(No.2018TP1010)+1 种基金the Strategic Priority Research Program of Chinese Academy of Science(No.XDB30000000)the National Key Research and Development Program of Ministry of Science and Technology(No.2018YFA0703704).
文摘Mulitipe stoichiometric ratio of two-dimensional(2D)transition metal dichalcogenides(TMDCs)attracted considerable interest for their unique chemical and physical properties.Here we developed a chemical vapor deposition(CVD)method to controllably synthesize ultrathin NiS and NiS2 nanoplates.By tuning the growth temperature and the amounts of the sulfur powder,2D nonlayered NiS and NiS2 nanoplates can be selectively prepared with the thickness of 2.0 and 7.0 nm,respectively.X-ray diffraction(XRD)and transmission electron microscopy(TEM)characterization reveal that the 2D NiS and N1S2 nanoplates are high-quality single crystals in the hexagonal and cubic phase,respectively.Electrical transport studies show that electrical conductivities of the 2D NiS and N1S2 nanoplates are as high as 4.6 x 10^5 and 6.3 x 10^5 S·m^-1,respectively.The electrical results demonstrate that the synthesized metallic NiS and NiS2 could serve as good electrodes in 2D electronics.
基金the Fundamental Research Funds of the Central Universities (No.531107051078)the Double First-Class University Initiative of Hunan University (No.531109100004). We also acknowledge the support from the National Natural Science Foundation of China (No.751214296)+1 种基金Hunan Key Laboratory of Two-Dimensional Materials (No.801200005)Strategic Priority Research Program of Chinese Academy of Science (No.XDB30000000).
文摘The mixed-dimensional integration of two-dimensional (2D) materials with non-2D materials can give rise to prominent advances in performance or function.To date,the mixed-dimensional one-dimensional (1D)/2D heterostructures have been fabricated using various physical assembly approaches.However,direct epitaxial growth method which has notable advantages in preparing large-scale products and obtaining perfect interfaces is rarely investigated.Herein,we demonstrate for the first time the direct synthesis of the 1D/2D mixed-dimensional heterostructures by sequential vapor-phase growth of Sb2Se3 nanowires on WS2 monolayers.X-ray diffraction (XRD) pattern and Raman spectrum confirm the composition of the Sb2Se3/NS2 heterostructures.Transmission electron microscope (TEM) measurement demonstrates high quality of the heterostructures.Electrical transport characterization reveals that Sb2Se3 nanowire exhibits p-type characteristic and that WS2 monolayer exhibits n-type behavior,and that the p-n diode from 1D/2D mixed-dimensional Sb2Se3/WS2 heterostructure possesses obvious current rectification behavior.Optoelectronic measurements of the heterostructures show apparent photovoltaic response with an open-circuit voltage of 0.19 V,photoresponsivity of 1.51 A/W (Vds =5 V) and fast response time of less than 8 ms.The van der Waals epitaxial growth mode of Sb2Se3 nanowires on WS2 monolayers is verified by stripping the Sb2Se3 nanowire from the heterostructures using tape.Together,the direct van der Waals epitaxy opens a facile pathway to 1D/2D mixed-dimensional heterostructures for functional electronic and optoelectronic devices.
基金We acknowledge the support from National Natural Science Foundation of China(Nos.61804050,51991340,51991343,and 51872086)the Fundamental Research Funds of the Central Universities(Nos.531107051078 and 531107051055)+2 种基金the Double First-Class Initiative of Hunan University(No.531109100004)the Hunan Key Laboratory of Two-Dimensional Materials(No.2018TP1010)the Strategic Priority Research Program of Chinese Academy of Science,Grant(No.XDB30000000).
文摘Palladium diselenide(PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synthesize PdSe2 via chemical vapor deposition(CVD)method.Through systematic regulation of temperature in the growth process,we can tune the thickness,size,nucleation density and morphology of PdSe2 nanosheets.Field-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm^2·V^−1·s^−1.The electrical property of the devices after 6 months keeping in the air show little change,implying outstanding air-stability of PdSe2.In addition,PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W^−1 under 914 nm laser.These performances are better than those of most CVD-grown 2D materials,making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.
基金financial support from the National Natural Science Foundation of China(21871198)the Major Research Project of the Natural Science of the Jiangsu Higher Education Institutions(19KJA360005 and 19KJA320007),and PAPD.
文摘Comprehensive Summary Four heterometallic rare earth(Ⅲ)-cobalt(Ⅱ)complexes(rare earth=Y(1),Sm(2),Nd(3),La(4))stabilized by an o-phenylenediamine-bridged tris(phenolato)ligand(L)have been synthesized and characterized.In these tetranuclear complexes,one polydentate L coordinates to one rare earth(Ⅲ)ion,and one cobalt(Ⅱ)ion,respectively,while two rare earth ions are bridged by four acetate groups.These complexes were applied in the copolymerization of cyclohexene oxide and CO_(2),which showed good activity(TON up to 440)and high poly(cyclohexene carbonate)selectivity(>99%).Kinetic studies determined the equation as rate=k[CHO]1[CO_(2)]0[initiator]1,which proves a first-order dependence on initiator concentrations and implies a synergistic mechanism with rare earth and cobalt ions cooperating in epoxide ring-opening and chain propagation.
基金support from the National Key R&D Program of China(No.2018YFA0703700)the National Natural Science Foundation of China(Nos.51802090,61874041,51991340,and 51991341)X.D.acknowledges the support from the National Natural Science Foundation of China(No.51991343)。
文摘The two-dimensional transition metal dichalcogenides(TMDs)have attracted intense interest as an atomically thin semiconductor channel for the continued transistor scaling.However,with a dangling bond free surface,it has been a key challenge to reliably integrate high-quality gate dielectrics on TMDs.In particular,the atomic layer deposition of dielectrics on TMDs typically features highly non-uniform nucleation and produces a highly rough or porous dielectric film with rich pinholes that are prone to further damage during the gate integration process.Herein we report a van der Waals(vdW)integration route towards highly reliable gate metal integration on porous dielectrics.The physical lamination process employed by the vdW integration avoids the direct deposition of metal electrodes into porous dielectrics to ensure reliable gate integration and produce low gate leakage devices.The electrical measurements demonstrate the vdW integrated MoS_(2) top gate devices exhibit substantially reduced gate leakage current that is about 3-5 orders of magnitude smaller than that with deposited metal electrodes.Furthermore,we show the vdW integration process can be used to create high performance top-gated MoS_(2) transistors with ultrathin Al_(2)O_(3) dielectrics down to 1 nm,representing the ultimate dielectric scaling for TMDs transistors.This study demonstrates that vdW integration can enable highly reliable gate integration on relatively low quality dielectrics on TMDs,and opens an interesting pathway to high-performance top-gate transistors using dangling bond free two-dimensional(2D)semiconductors.
文摘Given the different energy rates of multiple types of power generation units,different operation plans affect the economy of microgrids.Limited by load and power generation forecasting technologies,the economic superiority of day-ahead plans is unable to be fully utilized because of the fluctuation of loads and power sources.In this regard,a two-stage correction strategy-based real-time dispatch method for the economic operation of microgrids is proposed.Based on the optimal day-ahead economic operation plan,unbalanced power is validly allocated in two stages in terms of power increment and current power,which maintains the economy of the day-ahead plan.Further,for operating point offset during real-time correction,a rolling dispatch method is introduced to dynamically update the system operation plan.Finally,the results verify the effectiveness of the proposed method.