A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoS...A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoSiN monolayer thin film and [FeCoSiN/SiNx]n multilayer thin film were investigated systematically. When FeCo thin film was doped with Si and N, the resis- tivity and soft magnetic properties of the obtained FeCo- SiN thin film can be improved effectively. The coercivity （He）, resistivity （p） and ferromagnetic resonance frequency （fr） can be further optimized for the [FeCoSiN/SiNx]n multilayer thin film. When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm, the He, p andfr for [FeCoSiN/SiNx]n multilayer thin film are 225 A·m^-1 392 μΩ·cm^-1 and 4.29 GHz, respectively. In addition, the low coercivity of easy axis （Hoe ≈ 506 A·m^-1） of [FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300℃ in air for 2 h.展开更多
基金financially supported by the National Basic Research Program of China(No.2012CB933103)the National Natural Science Foundation of China(Nos.51171158, 51371154 and 51301145)the Natural Science Foundation of Fujian Province of China(No.2014J05009)
文摘A series of FeCo-based thin films were pre- pared by magnetron sputtering without applying an induced magnetic field. The microstructure, electrical properties, magnetic properties and thermal stability of FeCo, FeCoSiN monolayer thin film and [FeCoSiN/SiNx]n multilayer thin film were investigated systematically. When FeCo thin film was doped with Si and N, the resis- tivity and soft magnetic properties of the obtained FeCo- SiN thin film can be improved effectively. The coercivity （He）, resistivity （p） and ferromagnetic resonance frequency （fr） can be further optimized for the [FeCoSiN/SiNx]n multilayer thin film. When the thickness of FeCoSiN layer and SiNx layer is maintained at 7 and 2 nm, the He, p andfr for [FeCoSiN/SiNx]n multilayer thin film are 225 A·m^-1 392 μΩ·cm^-1 and 4.29 GHz, respectively. In addition, the low coercivity of easy axis （Hoe ≈ 506 A·m^-1） of [FeCoSiN/SiNx]n multilayer thin film can be maintained after annealing at 300℃ in air for 2 h.
