The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different N...The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different NH3flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3flow rates. By optimization, when the NH3flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3flow rate. It is found that amorphous silicon is dominant in the samples with low NH3flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0to Si+4as the NH3flow rate increases.展开更多
基金supported by the National Key R&D Program of China(Nos.2017YFB0405300,2016YFB0402400)the National Natural Science Foundation of China(Nos.61775228,61675225,61605232)
文摘The surface and optical properties of silicon nitride samples with different compositions were investigated. The samples were deposited on In P by inductively coupled plasma chemical vapor deposition using different NH3flow rates. Atomic force microscopy measurements show that the surface roughness is increased for the samples with both low and high NH3flow rates. By optimization, when the NH3flow rate is 6 sccm, a smooth surface with RMS roughness of 0.74 nm over a 5 × 5 μm2area has been achieved. X-ray photoelectron spectroscopy measurements reveal the Si/N ratio of the samples as a function of NH3flow rate. It is found that amorphous silicon is dominant in the samples with low NH3flow rates, which is also proved in Raman measurements. The bonding energies of the Si and N atoms have been extracted and analyzed. Results show that the bonding states of Si atoms transfer from Si0to Si+4as the NH3flow rate increases.
