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A 75 GHz regenerative dynamic frequency divider with active transformer using InGaAs/InP HBT technology
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作者 Xi Wang bichan zhang +4 位作者 Hua Zhao Yongbo Su Asif Muhammad Dong Guo Zhi Jin 《Journal of Semiconductors》 EI CAS CSCD 2017年第8期55-60,共6页
This letter presents a high speed 2 : 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-sta... This letter presents a high speed 2 : 1 regenerative dynamic frequency divider with an active transformer fabricated in 0.7μm InP DHBT technology with fTof 165 GHz and fmax of 230 GHz. The circuit includes a two-stage active transtbrmer, input buffer, divider core and output buffer. The core part of the frequency divider is composed of a double-balanced active mixer (widely known as the Gilbert cell) and a regenerative feedback loop. The active transformer with two stages can contribute to positive gain and greatly improve phase difference. Instead of the passive transformer, the active one occupies a much smaller chip area. The area of the chip is only 469 × 414μm2 and it entirely consumes a total DC power of only 94.6 mW from a single -4.8 V DC supply. The measured results present that the divider achieves an operating frequency bandwidth from 75 to 80 GHz, and performs a -23 dBm maximunl output power at 37.5 GHz with a 0 dBm input signal of 75 GHz. 展开更多
关键词 INP hetero-junction bipolar transistors dynamic frequency divider
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