High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 ...High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 nm)were realized by Osram Corp until 2009[5],which was 15 years after the first violet InGaN LDs.The greatest challenge is the growth of InGaN/(In)GaN multiple-quantum-well(MQW)active regions with high potential homogeneity.The potential fluctuation becomes pronounced as the indium composition increases in InGaN quantum wells(QWs)[6]due to the composition and interface fluctuation.展开更多
基金financially supported by the National Key Research and Development Program of China(2017YFE0131500)the National Natural Science Foundation of China(61834008,61704184 and 61804164)+2 种基金the Key Research and Development Program of Jiangsu province(BE2020004)the Natural Science Foundation of Jiangsu Province(BK20180254)Guangdong Basic and Applied Basic Research Foundation(2019B1515120091)。
文摘High-performance green InGaN laser diodes(LDs)are highly demanded in laser display,medical instruments,and quantum technology[1-4].However,the fabrication of green LDs is challenging,and GaN-based green LDs(λ>500 nm)were realized by Osram Corp until 2009[5],which was 15 years after the first violet InGaN LDs.The greatest challenge is the growth of InGaN/(In)GaN multiple-quantum-well(MQW)active regions with high potential homogeneity.The potential fluctuation becomes pronounced as the indium composition increases in InGaN quantum wells(QWs)[6]due to the composition and interface fluctuation.
