气相助剂辅助绝缘衬底上石墨烯生长:现状与展望

借助化学气相沉积(chemical vapor deposition,CVD)技术在绝缘衬底上直接生长的石墨烯薄膜,在能源存储/转换等领域有着广阔的应用前景。然而,绝缘衬底表面石墨烯的生长呈现成核密度高、畴区尺寸小、生长速率低等特点,获得的石墨烯薄膜往往具有较高的晶界密度和较低的层数均匀度,严重制约着石墨烯基器件性能的发挥。在反应体系中引入气相助剂可有效降低碳源裂解和石墨烯生长的能垒,从而实现石墨烯品质与生长速率的提升。本文综述气相助剂辅助绝缘衬底上石墨烯制备的方法:首先对绝缘衬底上石墨烯的生长行为进行分析;随后着重介绍几类常见的气相助剂辅助石墨烯生长的策略和机理;最后,总结绝缘衬底上制备高品质石墨烯存在的挑战,并对未来的发展方向进行展望。

CO_(2)-promoted transfer-free growth of conformal graphene

Gaseous promotors have readily been adopted during the direct synthesis of graphene over insulators to enhance the growth quality and/or boost the growth rate.The understanding of the real functions of carbon-containing promotors has still remained elusive.In this study,we identify the critical roles of a representative CO_(2)promotor played in the direct growth of graphene.The comparative experimental trials validate CO_(2)as an effective modulator to decrease graphene nucleation density,improve growth kinetics,mitigate adlayer formation.The first-principles calculations illustrate that the generation of gas-phase OH species in CO_(2)-assisted system helps decrease the energy barriers of CH4 decomposition and carbon attachment to the growth front,which might be the key factor to allow high-quality direct growth.Such a CO_(2)-promoted strategy enables the conformal coating of graphene film over curved insulators,where the sheet resistance of grown graphene on quartz reaches as low as 1.26 kΩ·sq^(−1)at an optical transmittance of~95.8%.The fabricated endoscope lens based on our conformal graphene harvests an apoptosis of 82.8%for noninvasive thermal therapy.The work presented here is expected to motivate further investigations in the controllable growth of high-quality graphene on insulating substrates.

Oxygen-assisted direct growth of large-domain and high-quality graphene on glass targeting advanced optical filter applications

Growing high quality graphene films directly on glass by chemical vapor deposition(CVD)meets a growing demand for constructing high-performance electronic and optoelectronic devices.However,the graphene synthesized by prevailing methodologies is normally of polycrystalline nature with high nucleation density and limited domain size,which significantly handicaps its overall properties and device performances.Herein,we report an oxygen-assisted CVD strategy to allow the direct synthesis of 6-inch-scale graphene glass harvesting markedly increased graphene domain size(from 0.2 to 1.8μm).Significantly,as-produced graphene glass attains record high electrical conductivity(realizing a sheet resistance of 900Ω·sq^(-1)at a visible-light transmittance of 92%)amongst the state-of-the-art counterparts,readily serving as transparent electrodes for fabricating high-performance optical filter devices.This work might open a new avenue for the scalable production and application of emerging graphene glass materials with high quality and low cost.

Growth of 12-inch uniform monolayer graphene film on molten glass and its application in PbI2-based photodetector

Direct growth of large area uniform graphene on functional insulating materials is essential for engineering versatile applications of graphene. However, the existing synthesis approaches can hardly avoid the generation of non-uniform multilayer graphene along the gas flow direction, affording huge challenges for further scaling up. Herein, by exploiting the molten state of soda-lime glass, we have accomplished the direct growth of large area uniform (up to 30 cm × 6 cm) graphene via a facile chemical vapor deposition route on low cost soda-lime glass. The use of molten glass eliminates the chemically active sites (surface corrugations, scratches, defects), and improves the mobility of carbon precursors, affording uniform nucleation and growth of monolayer graphene. Intriguingly, thus-obtained graphene acts as an ideal coating layer for the surface crystallographic modification of soda-lime glass, making it epitaxy substrates for synthesizing high-quality PbI2 nanoplates and continues films. Accordingly, a prototype photodetector was fabricated to present excellent photoelectrical properties of high responsivity (~ 600 on/off current ratio) and fast response speed (18 μs). This work hereby paves ways for the batch production and the direct applications of graphene glass as platforms for constructing high performance electronic and optoelectronic devices.

Batch synthesis of transfer-free graphene with wafer-scale uniformity

Scalable synthesis of transfer-free graphene over insulators offers exciting opportunity for next-generation electronics and optoelectronics.However,rational design of synthetic protocols to harvest wafer-scale production of directly grown graphene still remains a daunting challenge.Herein we explore a batch synthesis of large-area graphene with wafer-scale uniformity by virtue of direct chemical vapor deposition(CVD)on quartz.Such a controllable CVD approach allows to synthesize 30 pieces of 4-inch graphene wafers in one batch,affording a low fluctuation of optical and electrical properties.Computational fluid dynamics simulations reveal the mechanism of uniform growth,indicating thermal field and confined flow field play leading roles in attaining the batch uniformity.The resulting wafer-scale graphene enables the direct utilization as key components in optical elements.Our method is applicable to other types of insulating substrates(e.g.,sapphire,SiO2/Si,Si3N4),which may open a new avenue for direct manufacture of graphene wafers in an economic fashion.