Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet o...Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet of Things.Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node.Two-dimensional(2D)semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes.In the recent 10 years,the key issues on 2D semiconductors regarding material,processing,and integration have been overcome in sequence,making 2D semiconductors already on the verge of application.In this paper,the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors.We mainly focus on the optimization strategies of mobility(μ),equivalent oxide thickness(EOT),and contact resistance(RC),which enables high ON current(Ion)with reduced driving voltage(Vdd).Finally,we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.展开更多
We present a single-event burnout(SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional(3 D) numerical simulation. The advantage of the proposed structure is that the work of...We present a single-event burnout(SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional(3 D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region(P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer(LET),which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.展开更多
基金the National Natural Science Foundation of China(Grant Numbers 62204124,96964202,62204130,52105369,and 61974070)the Natural Science Foundation of Jiangsu Province(Grant Numbers BK20220397,BK20180759,BK20190725,BK20180759,and BK20200746)+2 种基金the Startup Foundation of Nanjing University of Posts and Telecommunications(Grant Numbers NY220114,NY220066,NY219139,NY218149,and NY220077)Guangdong Greater Bay Area Institute of Integrated Circuit and System(Grant Number 2021B0101280002)Guangzhou City Research and Development Program in Key Field(Grant Number 20210302001)。
文摘Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet of Things.Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node.Two-dimensional(2D)semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes.In the recent 10 years,the key issues on 2D semiconductors regarding material,processing,and integration have been overcome in sequence,making 2D semiconductors already on the verge of application.In this paper,the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors.We mainly focus on the optimization strategies of mobility(μ),equivalent oxide thickness(EOT),and contact resistance(RC),which enables high ON current(Ion)with reduced driving voltage(Vdd).Finally,we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade.
基金Project supported by the National Natural Science Foundation of China(Nos.61404161,61404068,61404169)
文摘We present a single-event burnout(SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional(3 D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region(P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer(LET),which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to0.7 p C/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications.