期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Design of 35 GHz 1 Watt GaAs pHEMT Power Amplifier MMIC
1
作者 bo hong wen-bin dou 《Journal of Electronic Science and Technology》 CAS 2011年第1期81-84,共4页
By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit (MMIC) is presented.With careful optimi... By using 0.15 μm GaAs pHEMT (pseudomorphic high electron mobility transistor) technology,a design of millimeter wave power amplifier microwave monolithic integrated circuit (MMIC) is presented.With careful optimization on circuit structure,this two-stage power amplifier achieves a simulated gain of 15.5 dB with fluctuation of 1 dB from 33 GHz to 37 GHz.A simulated output power of more than 30 dBm in saturation can be drawn from 3 W DC supply with maximum power added efficiency (PAE) of 26%.Rigorous electromagnetic simulation is performed to make sure the simulation results are credible.The whole chip area is 3.99 mm2 including all bond pads. 展开更多
关键词 GaAs pHEMT (pseudomorphic high electron mobility transistor) millimeter wave microwave monolithic integrated circuit power adde defficiency power amplifier.
下载PDF
上一页 1 下一页 到第
使用帮助 返回顶部