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Encapsulation strategies on 2D materials for field effect transistors and photodetectors 被引量:2
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作者 Wenjuan Huang Yue Zhang +5 位作者 Mengting Song bugao wang Huayi Hou Xiaozong Hu Xiangbai Chen Tianyou Zhai 《Chinese Chemical Letters》 SCIE CAS CSCD 2022年第5期2281-2290,共10页
Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottl... Two-dimensional(2D)layered materials provide a promising alternative solution for overcoming the scal-ing limits in conventional Si-based devices.However,practical applications of 2D materials are facing crucial bottlenecks,particularly that arising from the instability under ambient condition.The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions,both experimentally and theoretically.This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials.The en-capsulation strategies of mechanical transfer,polymer capping,atomic layer deposition,in-situ oxidation,and surface functionalization are systematically discussed for improving the ambient stability of 2D mate-rials.In addition,the current advances in air-stable and high-performance 2D materials-based field effect transistors(FETs)and photodetectors assisted by the encapsulation strategies are outlined.Furthermore,the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested. 展开更多
关键词 Two-dimensional materials ENCAPSULATION DEGRADATION Stability Field effect transistors PHOTODETECTORS
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