Hybrid perovskite solar cells(PSCs)have been intensively studied in recent years because of their high efficiency and low costs.For PSCs,the electron transport layer(ETL)is a key for its photoelectric conversion effic...Hybrid perovskite solar cells(PSCs)have been intensively studied in recent years because of their high efficiency and low costs.For PSCs,the electron transport layer(ETL)is a key for its photoelectric conversion efficiency.Here we demonstrate the application of amorphous InGaZnO_(4)thin films as ETL for efficient PSCs by pulsed laser deposition(PLD).The PSC device using such InGaZnO_(4)amorphous film as ETL has achieved an efficiency of 15.1%.The outstanding performance is attributed to the excellent properties of amorphous InGaZnO_(4)oxide thin films,including high electron mobility and high transparency,what is more,the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process.Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.展开更多
基金supported by the National Natural Science Foundation of China(Nos.51972157,11964017)the Jiangxi’s Natural Science Foundation(No.20192ACB21017)the financial support from Hubei Key Laboratory of Ferro and Piezoelectric Materials and Devices(No.K201803).
文摘Hybrid perovskite solar cells(PSCs)have been intensively studied in recent years because of their high efficiency and low costs.For PSCs,the electron transport layer(ETL)is a key for its photoelectric conversion efficiency.Here we demonstrate the application of amorphous InGaZnO_(4)thin films as ETL for efficient PSCs by pulsed laser deposition(PLD).The PSC device using such InGaZnO_(4)amorphous film as ETL has achieved an efficiency of 15.1%.The outstanding performance is attributed to the excellent properties of amorphous InGaZnO_(4)oxide thin films,including high electron mobility and high transparency,what is more,the electronic properties of the films can be controlled by changing the partial pressure of oxygen in the deposition chamber and post-deposition annealing process.Our result will be helpful for preparation of large area PSCs and other opto-electric devices at low temperature by physical vapor deposition method.
