Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectro...Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.展开更多
基金supported by the National Research Foundation of Korea grant funded by the Korea government(MSIT)(NRF-2021R1A2C2012855).
文摘Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.
