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1.3 μm InGaAsN/ GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources
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作者 Gray Lin c. M. Lu +4 位作者 c. h. chiou I. F. chen T. D. Lee J. Y. chi D.A. Livshits 《光学学报》 EI CAS CSCD 北大核心 2003年第S1期325-326,共2页
We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/GaAs system, our SQW lasers of 1.3μm range is among the best in terms of ... We have demonstrated InGaAsN/ GaAs single quantum well (SQW) lasers grown by MOCVD using TBAs and DMHy sources. For un-buffer-strained InGaAsN/GaAs system, our SQW lasers of 1.3μm range is among the best in terms of transparency and threshold current density. 展开更多
关键词 GaAs Lasers Grown by MOCVD Using TBAs and DMHy Sources in as have MOCVD m InGaAsN by
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