The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of ...The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.展开更多
文摘The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.
