Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition...Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al_(2)O_(3)-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C–F polymer re-deposition.展开更多
基金Supported by the Industry/University Cooperative Research Center in Data Storage Technology and Applications,King Mongkut’s Institute of Technology Ladkrabang and the National Electronics and Computer Technology Center,the National Science and Technology Development Agencythe Commission of Higher Education under the National Research University(NRU)Project.
文摘Re-deposition is a non-volatile etching by-product in reactive ion etching systems that is well known to cause dirt on etching work.In this study,we propose a novel etching method called the polymer-rich re-deposition technique,used particularly for improving the etched sidewall where the re-deposition is able to accumulate.This technique works by allowing the accumulated re-deposition on the etched sidewall to have a higher polymer species than the new compounds in the non-volatile etching by-product.The polymer-rich re-deposition is easy to remove along with the photo-resist mask residual at the photo-resist strip step using an isopropyl alcohol-based solution.The traditional,additional cleaning process step used to remove the re-deposition material is not required anymore,so this reduces the overall processing time.The technique is demonstrated on an Al_(2)O_(3)-TiC substrate by C4F8 plasma,and the EDX spectrum confirms that the polymer re-deposition has C and F atoms as the dominant atoms,suggesting that it is a C–F polymer re-deposition.
