采用第一性原理对3C-Si C块体和3C-Si C(111)、(110)和(100)三个表面的电子结构和光学性质进行理论计算。计算结果表明:3C-Si C块体是带隙为1.44 e V的G-M间接带隙半导体,3C-Si C(111)表面是带隙为2.05 e V的M-G间接带隙半导体,3C-Si C(...采用第一性原理对3C-Si C块体和3C-Si C(111)、(110)和(100)三个表面的电子结构和光学性质进行理论计算。计算结果表明:3C-Si C块体是带隙为1.44 e V的G-M间接带隙半导体,3C-Si C(111)表面是带隙为2.05 e V的M-G间接带隙半导体,3C-Si C(110)表面形成带隙值为0.87 e V的直接带隙半导体;3C-Si C(100)表面转变为导体。由光学性质分析得到,与3C-Si C块体比较,3C-Si C(100)、(110)、(111)表面的介电函数,吸收谱,反射谱,能量损失函数等均出现红移。展开更多
We analyze the entanglement of two atoms in a cavity. The evolvement of entanglement of two atoms is disorderly when two atoms in the cavity are fixed at initial time. However, the evolvement of entanglement of two at...We analyze the entanglement of two atoms in a cavity. The evolvement of entanglement of two atoms is disorderly when two atoms in the cavity are fixed at initial time. However, the evolvement of entanglement of two atoms becomes well-regulated orderly under the coherent cavity field when atoms are in motion at beginning. We find that it is possible to control this periodic entanglement by properly choosing the velocity of atoms, and the initial state of the field.展开更多
文摘采用第一性原理对3C-Si C块体和3C-Si C(111)、(110)和(100)三个表面的电子结构和光学性质进行理论计算。计算结果表明:3C-Si C块体是带隙为1.44 e V的G-M间接带隙半导体,3C-Si C(111)表面是带隙为2.05 e V的M-G间接带隙半导体,3C-Si C(110)表面形成带隙值为0.87 e V的直接带隙半导体;3C-Si C(100)表面转变为导体。由光学性质分析得到,与3C-Si C块体比较,3C-Si C(100)、(110)、(111)表面的介电函数,吸收谱,反射谱,能量损失函数等均出现红移。
基金The project supported by the State 973 Project under Grant No.2006CB921606by the Natural Science Foundation of Hubei Province
文摘We analyze the entanglement of two atoms in a cavity. The evolvement of entanglement of two atoms is disorderly when two atoms in the cavity are fixed at initial time. However, the evolvement of entanglement of two atoms becomes well-regulated orderly under the coherent cavity field when atoms are in motion at beginning. We find that it is possible to control this periodic entanglement by properly choosing the velocity of atoms, and the initial state of the field.
