The a Si∶H/SiN x ∶H sample series are investigated by means of Raman scattering technique(RST). The result shows that due to the structural mismatch between a Si∶H and a SiN x ∶H, severe induced distortions are pr...The a Si∶H/SiN x ∶H sample series are investigated by means of Raman scattering technique(RST). The result shows that due to the structural mismatch between a Si∶H and a SiN x ∶H, severe induced distortions are produced in the interface of the heterojunction, and these induced distortions tend towards a certain energy state. The ordering of the interface structure depends on the periodic number of multilayer thin films.展开更多
文摘The a Si∶H/SiN x ∶H sample series are investigated by means of Raman scattering technique(RST). The result shows that due to the structural mismatch between a Si∶H and a SiN x ∶H, severe induced distortions are produced in the interface of the heterojunction, and these induced distortions tend towards a certain energy state. The ordering of the interface structure depends on the periodic number of multilayer thin films.
