基于金属织物和自然摩擦带电的电子皮肤对人体运动的智能识别

目前已开发出各种基于电子或光学信号的技术来感知身体运动,这在医疗保健、康复和人机交互等领域至关重要.然而,这些信号都是从身体外部获取的.本研究中,我们制备了一种电子皮肤(e-skin)人体运动传感器,它利用有机聚合物和金属织物的组合,通过人体的自然电荷感应(EI)来检测运动.该电子皮肤可获得高达450 V的人体电势信号.此外,该信号可通过最先进的深度学习技术自动提取和训练.该传感器能准确识别睡眠活动,准确率约为96.55%.这种可穿戴运动传感器可以与物联网技术无缝集成,实现多功能应用,展示了其在人类活动识别和人工智能方面的潜在用途.

Self-powered flexible fingerprint-recognition display based on a triboelectric nanogenerator

In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human–computer interaction.However,their reliance on external high-voltage AC power supplies poses challenges in terms of wearability and limits their practical application.This paper proposed an innovative scheme for preparing a feather triboelectric nanogenerator(F-TENG)using recyclable and environmentally friendly material.The highest open-circuit voltage,short-circuit current,and transferred charge of SF6-treated F-TENGs can reach 449 V,63μA,and 152 nC,which enables easy lighting of BaTiO_(3)^(-)doped ACEL devices.Using a human electrical potential,a single-electrode F-TENG is combined with ACEL device for self-powered fingerprint recognition display.These works achieve self-powered flexible wearable ACEL devices,which are not only efficient and portable but also have good application prospects in the human–computer interaction,functional displays,and wearable electronic devices.

Non-contact and non-destructive in-situ inspection for CdSe quantum dot film based on the principle of field-induced photoluminescence quenching

CdSe quantum-dot(QD)film,as the core function layer,plays a key role in various optoelectronic devices.The thickness uniformity of QD films is one of the key factors to determine the overall photoelectric performance.Therefore,it is important to obtain the thickness distribution of large-area QD films.However,it is difficult for traditional methods to quickly get the information related to its thickness distribution without introducing additional damage.In this paper,a non-contact and non-destructive inspection method for in-situ detecting the thickness uniformity of CdSe QD film is proposed.The principle behind this in-situ inspection method is that the photoluminescence quenching phenomenon of the QD film would occur under a high electric field,and the degree of photoluminescence quenching is related to the thickness of the quantum dot films.Photoluminescence images of the same QD film without and with an electric field are recorded by a charge-coupled device camera,respectively.By transforming the brightness distribution of these two images,we can intuitively see the thickness information of the thin film array of QD.The proposed method provides a meaningful inspection for the manufacture of QD based lightemitting display.

Non-destructive electroluminescence inspection for LED epitaxial wafers based on soft single-contact operation

Non-destructive and accurate inspection of gallium nitride light-emitting diode(Ga N-LED)epitaxial wafers is important to Ga N-LED technology.However,the conventional electroluminescence inspection,the photoluminescence inspection,and the automated optical inspection cannot fulfill the complex technical requirements.In this work,an inspection method and an operation system based on soft single-contact operation,namely,single-contact electroluminescence(SC-EL)inspection,are proposed.The key component of the SC-EL inspection system is a soft conductive probe with an optical fiber inside,and an AC voltage(70Vpp,100 k Hz)is applied between the probe and the ITO electrode under the LED epitaxial wafer.The proposed SC-EL inspection can measure both the electrical and optical parameters of the LED epitaxial wafer at the same time,while not causing mechanical damage to the LED epitaxial wafer.Moreover,it is demonstrated that the SC-EL inspection has a higher electroluminescence wavelength accuracy than photoluminescence inspection.The results show that the non-uniformity of SC-EL inspection is 444.64%,which is much lower than that of photoluminescence inspection.In addition,the obtained electrical parameters from SC-EL can reflect the reverse leakage current(Is)level of the LED epitaxial wafer.The proposed SC-EL inspection can ensure high inspection accuracy without causing damage to the LED epitaxial wafer,which holds promising application in LED technology.