Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structu...Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structural properties are investigated.With an increasing substrate temperature,the Raman crystalline volume fraction increases,but decreases with a further increase.The maximum Raman crystalline volume fraction of the nanocrystalline silicon 61ms is about 74%and also has the highest microstructural factor(R=0.89)at a substrate temperature of 250℃.The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction.The continuous transition of the fi1m structures from columnar to agglomerated is observed at a substrate temperature of 300℃.The optical band gaps of the grown thin 61ms declines(from 1.89 to 1.53 eV)and dark electrical conductivity increases(from about 10-10 to about 10-6 S/cm)with the increasing substrate temperature.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 50802037the Natural Science Foundation of Gansu Province under Grant No 0710RJZA041.
文摘Hydrogenated nanocrystalline silicon fi1ms are deposited onto glass substrates at different substrate temperatures(140-400℃)by hot-filament chemical vapor deposition.The effect of substrate temperature on the structural properties are investigated.With an increasing substrate temperature,the Raman crystalline volume fraction increases,but decreases with a further increase.The maximum Raman crystalline volume fraction of the nanocrystalline silicon 61ms is about 74%and also has the highest microstructural factor(R=0.89)at a substrate temperature of 250℃.The deposition rate exhibits a contrary tendency to that of the crystalline volume fraction.The continuous transition of the fi1m structures from columnar to agglomerated is observed at a substrate temperature of 300℃.The optical band gaps of the grown thin 61ms declines(from 1.89 to 1.53 eV)and dark electrical conductivity increases(from about 10-10 to about 10-6 S/cm)with the increasing substrate temperature.