In this paper reflectance(R)and thermoreflectance(TR)spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed.The heavily doped sample shows a red-shift and lifet...In this paper reflectance(R)and thermoreflectance(TR)spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed.The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E_(1)(~3.4eV)and E_(2)(~4.5eV).The values of the scattering timeτextracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.展开更多
文摘In this paper reflectance(R)and thermoreflectance(TR)spectra in heavily doped silicon concerning both interband and intraband transitions are reported and discussed.The heavily doped sample shows a red-shift and lifetime broadening in the two singularrities E_(1)(~3.4eV)and E_(2)(~4.5eV).The values of the scattering timeτextracted from the reflectivity fit are obtained and compared with those obtained from Hall mobility measurements.
