P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement a...P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.展开更多
The Al?Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al?Ti composite oxide films formed at diffe...The Al?Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al?Ti composite oxide films formed at different anodizing temperatures from 25°C to 85°C have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al?Ti composite oxide film converts into three layers, I–V characteristics change evidently, and the specific capacitance achieves a peak value at about 75°C. The local breakdown in the composite oxide films formed at 50°C occurs obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.展开更多
基金Chengdu Science and Technology Project (Grant No. 07GGYB572GX)Fund of State Key Laboratory (Grant No. L08010301JX0615)
文摘P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6·2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400℃, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm?3, resistivity of 0.04706 ?·cm and Hall mobility of 259 cm2/(V·s); they still exhibited p-type conduction after a month. When the substrate tem- perature was too high, the film was transformed from p-type to n-type conduction.
基金This work was supported by the Science and Technology Foundation of UESTC of Young Scholars(Grant No.L0801301JX04018).
文摘The Al?Ti composite oxide films with high dielectric constant were prepared by hydrolysis precipitation and anodizing. The growth, structure and electrical properties of the Al?Ti composite oxide films formed at different anodizing temperatures from 25°C to 85°C have been studied by dissolution of anodic oxide films, Auger electron spectroscopy (AES), and electrical measurements. With the anodizing temperature increasing, the film growth rate increases, the structure of two layers in the Al?Ti composite oxide film converts into three layers, I–V characteristics change evidently, and the specific capacitance achieves a peak value at about 75°C. The local breakdown in the composite oxide films formed at 50°C occurs obviously, which may be contributed to the lowest leakage current and the highest withstanding voltage.
