The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the ...The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic-Ic0 as well as the related changes of the current gain （β） will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic-Ic0 increase; ,8 and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of,a are much larger than SiGe HBT, which shows that SiGe HBT＇s anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed： Ic-Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will ,8 in less than 0.75 V. The mechanism of radiation-induced change in DC characteristies was also discussed.展开更多
The green/blue photoluminescence with peaks centered around 2.4 eV at room temperature was observed from nanocrystalline Si thin films prepared by the three-step rapid thermal annealing of hydrogenated amorphous silic...The green/blue photoluminescence with peaks centered around 2.4 eV at room temperature was observed from nanocrystalline Si thin films prepared by the three-step rapid thermal annealing of hydrogenated amorphous silicon iilms.The effect of the parameters of rapid thermal annealing on the light emission was studied.A comparison of photoluminescence feature between the films from the rapid thermal annealing and the furnace annealing of a-Si:H has been earned out.展开更多
基金National Natural Science Foundation of China (10075029 and 10375034)
文摘The changes of DC characteristics of SiGe HBT after being submitted to γ-ray irradiation of 700 krad, 7 000 krad and 10 000 krad were compared to those of Si BJT. Generally speaking, Ib and Ib- Ib0 increase with the doses increasing. For SiGe HBT, with the doses increasing, Ic and Ic-Ic0 as well as the related changes of the current gain （β） will decrease at higher Vbe, while for Si BJT, with the doses increasing, after irradiation, Ib and Ic-Ic0 increase; ,8 and its related changes also decrease with their differences, however, tending to be very small at high doses of 7 000 krad and 10 000 krad. Moreover, given the same doses, the decreases of,a are much larger than SiGe HBT, which shows that SiGe HBT＇s anti-radiation performance proves to be better than Si BJT. Still, in SiGe HBT, some strange phenomena were observed： Ic-Ic0 will increase after the radiation of 7 000 krad in less than 0.65 V and as will ,8 in less than 0.75 V. The mechanism of radiation-induced change in DC characteristies was also discussed.
基金Supported by the National Natural Science Foundation of Chinathe Foundation of Graduate School of Academia Sinica.
文摘The green/blue photoluminescence with peaks centered around 2.4 eV at room temperature was observed from nanocrystalline Si thin films prepared by the three-step rapid thermal annealing of hydrogenated amorphous silicon iilms.The effect of the parameters of rapid thermal annealing on the light emission was studied.A comparison of photoluminescence feature between the films from the rapid thermal annealing and the furnace annealing of a-Si:H has been earned out.
