This paper shows the harm of harmonic in power system,compares the measures of normal digital filter and wavelet MARto afford reference to the detection and elimination in power system harmonic control.
Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage...Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.展开更多
基金This paper is supported by Chunhui pro-gram of MOE(Z2005-1-52015)
文摘This paper shows the harm of harmonic in power system,compares the measures of normal digital filter and wavelet MARto afford reference to the detection and elimination in power system harmonic control.
基金Funded by the National Natural Science Foundation of China(No.51262003)the Guangxi Key Laboratory of Information Materials(Guilin University of Electronic Technology),China(No.1110908-10-Z)
文摘Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.
