Highly preferred InN Rims are deposited on sapphire(0001)substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD)without using a buffer layer.The structure,surfac...Highly preferred InN Rims are deposited on sapphire(0001)substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD)without using a buffer layer.The structure,surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction,x-ray diffraction,x-ray photoelectron spectroscopy,atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.展开更多
We investigate the structural property and surface morphology of In_(x)Ga_(1−x)N films for In compositions ranging from 0.06 to 0.58,which are deposited by electron cyclotron resonance plasma enhanced metal organic ch...We investigate the structural property and surface morphology of In_(x)Ga_(1−x)N films for In compositions ranging from 0.06 to 0.58,which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD).The results of x-ray diffraction(XRD)in InGaN films confirm that they have excellent c−axis orientation.The In content in the InGaN epilayers is checked by electron probe microanalysis(EPMA),which reveals that In fractions determined by XRD are in good agreement with the EPMA results.Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm.The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 60976006 and 61040058the Science and Technology Foundation for Higher Education of Liaoning Province of China.
文摘Highly preferred InN Rims are deposited on sapphire(0001)substrates by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD)without using a buffer layer.The structure,surface morphological and electrical characteristics of InN are investigated by in-situ reflection high energy electron diffraction,x-ray diffraction,x-ray photoelectron spectroscopy,atomic force microscopy and Hall effect measurement.The quality of the as-grown InN films is markedly improved at the optimized N2 flux of 100 sccm.The results show that the properties of the Rims are strongly dependent on N2 flux.
基金Supported by the National Natural Science Foundation of China under Grant Nos.61040058 and 60976006the Science and Technology Foundation for Higher Education of Liaoning Province of China.
文摘We investigate the structural property and surface morphology of In_(x)Ga_(1−x)N films for In compositions ranging from 0.06 to 0.58,which are deposited by electron cyclotron resonance plasma enhanced metal organic chemical vapor deposition(ECR-PEMOCVD).The results of x-ray diffraction(XRD)in InGaN films confirm that they have excellent c−axis orientation.The In content in the InGaN epilayers is checked by electron probe microanalysis(EPMA),which reveals that In fractions determined by XRD are in good agreement with the EPMA results.Atomic force microscopy measurements reveal that the grown films have a surface roughness that varies between 4.16 and 8.14 nm.The results suggest that it is possible to deposit high-c-axis-orientation InGaN films with different In contents.
