The performance in vibration environment of switching apparatus containing mechanical contact is an important element when judging the apparatus’s reliability. A piecewise linear two-degrees-of-freedom mathematical m...The performance in vibration environment of switching apparatus containing mechanical contact is an important element when judging the apparatus’s reliability. A piecewise linear two-degrees-of-freedom mathematical model considering contact loss was built in this work, and the vibration performance of the model under random external Gaussian white noise excitation was investigated by using Monte Carlo simulation in Matlab/Simulink. Simulation showed that the spectral content and statistical characters of the contact force coincided strongly with reality. The random vibration character of the contact system was solved using time (numerical) domain simulation in this paper. Conclusions reached here are of great importance for reliability design of switching apparatus.展开更多
We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAl...We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.展开更多
基金Project (No. FEBQ24409102) supported by the Space Technology Innovation Fund, China
文摘The performance in vibration environment of switching apparatus containing mechanical contact is an important element when judging the apparatus’s reliability. A piecewise linear two-degrees-of-freedom mathematical model considering contact loss was built in this work, and the vibration performance of the model under random external Gaussian white noise excitation was investigated by using Monte Carlo simulation in Matlab/Simulink. Simulation showed that the spectral content and statistical characters of the contact force coincided strongly with reality. The random vibration character of the contact system was solved using time (numerical) domain simulation in this paper. Conclusions reached here are of great importance for reliability design of switching apparatus.
基金Supported by the Hundred Talents Program of Chinese Academy of SciencesKey Research Project of Fujian Province under Grant No 2011HZ001-3.
文摘We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.
