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Random vibration analysis of switching apparatus based on Monte Carlo method 被引量:6
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作者 ZHAI Guo-fu chen yang-hua REN Wan-bin 《Journal of Zhejiang University-Science A(Applied Physics & Engineering)》 SCIE EI CAS CSCD 2007年第3期422-425,共4页
The performance in vibration environment of switching apparatus containing mechanical contact is an important element when judging the apparatus’s reliability. A piecewise linear two-degrees-of-freedom mathematical m... The performance in vibration environment of switching apparatus containing mechanical contact is an important element when judging the apparatus’s reliability. A piecewise linear two-degrees-of-freedom mathematical model considering contact loss was built in this work, and the vibration performance of the model under random external Gaussian white noise excitation was investigated by using Monte Carlo simulation in Matlab/Simulink. Simulation showed that the spectral content and statistical characters of the contact force coincided strongly with reality. The random vibration character of the contact system was solved using time (numerical) domain simulation in this paper. Conclusions reached here are of great importance for reliability design of switching apparatus. 展开更多
关键词 Contact system Random vibration Monte Carlo simulation MATLAB/SIMULINK
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海军陆战队某部官兵强日晒环境下光损伤性皮肤病调查与分析 被引量:9
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作者 周剑峰 陈洋华 +2 位作者 任金波 周树勇 杨蓉娅 《实用皮肤病学杂志》 2018年第4期211-213,共3页
目的探讨强日晒环境下海军陆战部队官兵光损伤相关皮肤病的发病情况及其原因分析。方法采取临床检查登记和问卷调查结合的方法,对调查结果进行统计和分析。结果受调查的海军陆战队某部海训官兵575人,其中日光性皮炎175人,发病率为30.4%... 目的探讨强日晒环境下海军陆战部队官兵光损伤相关皮肤病的发病情况及其原因分析。方法采取临床检查登记和问卷调查结合的方法,对调查结果进行统计和分析。结果受调查的海军陆战队某部海训官兵575人,其中日光性皮炎175人,发病率为30.4%。长时间直接暴露组官兵发病率为43.2%,短时间直接暴露组官兵发病率为29.6%,非直接暴露组官兵发病率为9.7%,差异具有统计学意义。问卷调查结果分析,不同日晒时间组,痤疮的发生率、复发加重率有差异,肌肤敏感发生率有差异,军龄不同的参训者肌肤敏感发生率有差异。结论游泳训练、日晒时间等因素会导致海军陆战部队官兵光损伤性皮肤病,引发日光性皮炎、痤疮。肌肤敏感状态受到日晒时间、军龄等因素的影响。应教育官兵加强日光的防护意识,减少光损伤性皮肤病的发生。 展开更多
关键词 皮炎 日光性 光损伤 痤疮 紫外线
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Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AIGaInAs Lasers
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作者 MAO Yi-Wei WANG Yao +4 位作者 chen yang-hua XUE Zheng-Qun LIN Qi DUAN Yan-Min SU Hui 《Chinese Physics Letters》 SCIE CAS CSCD 2012年第6期141-144,共4页
We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAl... We investigate 1.3μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAIAs (barrier) on InP for high speed application,compared to the typical structures of In GaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier.We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells ( Q Ws).The advances of the new Q W design are mainly rooted in the large ratio between conduction-band and valence-band offsets (△Ec:△Ev =7:1),higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3μm lasers.Due to the 1ow confinement energy of holes,non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced.The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation. 展开更多
关键词 INGAASP GAASP BARRIER
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