Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-...Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device application.The grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been obtained.Temperature-dependent light-current measurement shows a characteristic temperature of75K.展开更多
This paper reports the improved performance of the lattice-matched N-p^(+)-n In_(0.49)Ga_(0.51)P/GaAs heterojunction bipolar transistors(HBTs)with undoped spacers grown by the gas source molecular beam epitaxy.A 600&#...This paper reports the improved performance of the lattice-matched N-p^(+)-n In_(0.49)Ga_(0.51)P/GaAs heterojunction bipolar transistors(HBTs)with undoped spacers grown by the gas source molecular beam epitaxy.A 600ÅGaAs base doped with beryllium at 3 × 1019cm^(-3) and a 1000Å In_(0.49)Ga_(0.51)P emitter doped with silicon at 3 × 1017cm^(-3) have been grown.On both sides of the base,the 50Åundoped GaAs spacers were grown.Devices with emitter area of 100× 100μm^(2) were fabricated by using selective wet chemical etching technique.The measured results of HBTs reveal cood junction characteristics,and the common-emitter current gain reaches 320 at the collector current density of 280 A/cm^(2).展开更多
A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz,based on the tirne...A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz,based on the tirne-dependent,nonlinear steady-state response to the applied electric field.It is found that although at low temperature(T=10 K)the dc mobility of the systems is suppressed by the intense radiation field,in agreement with the available experimental observation,the effect can be reversed at elevated temperature.At T=77 and 300 K,the dc mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.展开更多
基金Supported by the Key Project for Fundamental Study of Chinese Academy of Sciences under Grant No.KT951-B1-706-3.
文摘Device quality InAsP/InGaAsP strained multiquantum-well(MQW)structures are successfully grown by using gas source molecular beam epitaxy method.The grown MQW and InGaAsP quanternary alloy are characterized by using x-ray diffraction,room temperature photoluminescence measurements,confirming that optimum growth condition and high quality material have been obtained for device application.The grown laser structures are processed into ridge waveguide lasers.A threshold current as low as 16mA at 250C for 300μm long device has been obtained.Temperature-dependent light-current measurement shows a characteristic temperature of75K.
基金Supported by the Chinese Academy of Sciences under Grant No.DY95608030517.
文摘This paper reports the improved performance of the lattice-matched N-p^(+)-n In_(0.49)Ga_(0.51)P/GaAs heterojunction bipolar transistors(HBTs)with undoped spacers grown by the gas source molecular beam epitaxy.A 600ÅGaAs base doped with beryllium at 3 × 1019cm^(-3) and a 1000Å In_(0.49)Ga_(0.51)P emitter doped with silicon at 3 × 1017cm^(-3) have been grown.On both sides of the base,the 50Åundoped GaAs spacers were grown.Devices with emitter area of 100× 100μm^(2) were fabricated by using selective wet chemical etching technique.The measured results of HBTs reveal cood junction characteristics,and the common-emitter current gain reaches 320 at the collector current density of 280 A/cm^(2).
基金Supported by the National Natural Science Foundation of China under Grant No.19774061the National and Shanghai Commissions of Science and Technology of Chinathe Shanghai Foundation for Research and Development of Applied Materials.
文摘A theoretical examination of the electron transport in GaAs-based quantum wells was carried out under the influence of an intense electromagnetic irradiation in the frequency range from 0.1 to 1 THz,based on the tirne-dependent,nonlinear steady-state response to the applied electric field.It is found that although at low temperature(T=10 K)the dc mobility of the systems is suppressed by the intense radiation field,in agreement with the available experimental observation,the effect can be reversed at elevated temperature.At T=77 and 300 K,the dc mobility of the GaAs system turns out to be enhanced with the increasing strength of the ac field when its amplitude is large than a threshold value.
