We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering(FLS)experiment for a cell with ZnO nanorod doped in only one poly(vinyl alcohol)(PVA)layer.When...We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering(FLS)experiment for a cell with ZnO nanorod doped in only one poly(vinyl alcohol)(PVA)layer.When a dc voltage with a positive pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the transverse direction,which results in a higher diffraction efficiency.Conversely,when the dc voltage with a negative pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the longitudinal direction,which leads to a lower diffraction efficiency.A largest diffraction efficiency of about 9%is achieved in the ZnO nanorod doped liquid crystal cell.展开更多
A new interface anisotropic potential,which is proportional to the lattice mismatch of interfaces and has no fitting parameter,has been deduced for(001)zinc-blende semiconductor interfaces.The comparison with other in...A new interface anisotropic potential,which is proportional to the lattice mismatch of interfaces and has no fitting parameter,has been deduced for(001)zinc-blende semiconductor interfaces.The comparison with other interface models is given for GaAs/AlAs and GaAs/InAs interfaces.The strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.展开更多
基金by the National Natural Science Foundation of China(60625402,60990313)the 973 programme(2006CB604908,2006CB921607).
文摘We observe obviously different diffraction efficiencies with forward and reverse dc voltages in a forced-light-scattering(FLS)experiment for a cell with ZnO nanorod doped in only one poly(vinyl alcohol)(PVA)layer.When a dc voltage with a positive pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the transverse direction,which results in a higher diffraction efficiency.Conversely,when the dc voltage with a negative pole on the ZnO nanorod doped side is applied,the excited charge carriers primarily move along the longitudinal direction,which leads to a lower diffraction efficiency.A largest diffraction efficiency of about 9%is achieved in the ZnO nanorod doped liquid crystal cell.
基金Supported by the National Natural Science Foundation of China under Grant No.69391700.
文摘A new interface anisotropic potential,which is proportional to the lattice mismatch of interfaces and has no fitting parameter,has been deduced for(001)zinc-blende semiconductor interfaces.The comparison with other interface models is given for GaAs/AlAs and GaAs/InAs interfaces.The strong influence of the interface anisotropic potential on the inplane optical anisotropy of GaAs/AlGaAs low dimensional structures is demonstrated theoretically within the envelope function approximation.
