1
|
Reversible Phase Change for C-RAM Nano-Cell-Element Fabricated by Focused Ion Beam Method |
刘波
chenbomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2005 |
1
|
|
2
|
Effect of Annealing Temperature on the Microstructure and Resistivity of Ge2Sb2Te5 Films |
LIUBo
SONGZhi-Tang
FENGSong-Lin
chenbomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
1
|
|
3
|
Raman spectra and XPS studies of phase changes in Ge2Sb2Te5 films |
chenbomy
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2004 |
1
|
|
4
|
Single Cell Element of Chalcogenide Randoul Access Memory Fabricated with the Focused Ion Beam Method |
刘波
宋志棠
封松林
chenbomy
|
《Chinese Physics Letters》
SCIE
CAS
CSCD
|
2004 |
0 |
|