Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence mea...Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.展开更多
Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator subs...Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam epitaxy.Ge_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).展开更多
Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates.A remarkable Franz-Keldysh effect is observed in the wavelength range of 1620-1640nm with a largestΔα/αof 2.8 at ...Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates.A remarkable Franz-Keldysh effect is observed in the wavelength range of 1620-1640nm with a largestΔα/αof 2.8 at 1640nm by optical responsivity measurement.The remarkable change of absorption coefficient in the considerable large wavelength range makes Ge-on-silicon a promising candidate for Si-based electro-absorption modulators.The initial design predicts a modulator of bandwidth~50 GHz,and the extinction ratio>7dB by the measured parameter.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61036003,61176013,61177038,and 60906035)the High Technology Research and Development Program of China(Grant No.2011AA010302)
文摘Strain-compensated Ge/Si0.15Ge0.85 multiple quantum wells were grown on an Si0.1 Ge0.9 virtual substrate using ultrahigh vacuum chemical vapor deposition technology on an n＋-Si（001） substrate. Photoluminescence measurements were performed at room temperature, and the quantum confinement effect of the direct-bandgap transitions of a Ge quantum well was observed, which is in good agreement with the calculated results. The luminescence mechanism was discussed by recombination rate analysis and the temperature dependence of the luminescence spectrum.
基金Supported by the National Basic Research Program of China under Grant Nos 2013CB632103 and 2011CBA00608the National Natural Science Foundation of China under Grant Nos 61036003,61177038 and 61176013the Science Research Foundation of Huaqiao University under Grant 12BS221.
文摘Germanium-tin(Ge_(1-x)Sn_(x))p-type metal-oxide-semiconductor field effect transistors(pMOSFETs)were fabricated using a strained Ge_(0.985)Sn_(0.015) thin film that was epitaxially grown on a silicon-on-insulator substrate with a relaxed Ge buffer layer.The Ge buffer was deposited using a two-step chemical vapor deposition growth technique.The high quality Ge_(0.985)Sn_(0.015) layer was grown by solid source molecular beam epitaxy.Ge_(0.985)Sn_(0.015) pMOSFETs with Si surface passivation,TaN/HfO_(2) gate stack,and nickel stanogermanide[Ni(Ge_(1-x)Sn_(x))]source/drain were fabricated on the grown substrate.The device achieves an effective hole mobility of 182 cm^(2)/V·s at an inversion carrier density of 1×10^(13) cm^(-2).
基金Supported by the National Natural Science Foundation of China under Grant Nos 61036003,61176013,60906035and 61177038,the National High-Technology and Research Development Program of China under Grant No 2011AA010302the Tsinghua National Laboratory for Information Science and Technology(TNList)Cross-discipline Foundation.
文摘Ge-on-Si p-i-n diodes are fabricated by using two-step Ge film epitaxial technology on Si substrates.A remarkable Franz-Keldysh effect is observed in the wavelength range of 1620-1640nm with a largestΔα/αof 2.8 at 1640nm by optical responsivity measurement.The remarkable change of absorption coefficient in the considerable large wavelength range makes Ge-on-silicon a promising candidate for Si-based electro-absorption modulators.The initial design predicts a modulator of bandwidth~50 GHz,and the extinction ratio>7dB by the measured parameter.
